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X-Ray Photoemission Spectromicroscopy Of Gan And AIGan

Published online by Cambridge University Press:  10 February 2011

G. F. Lorusso ,
H. Solak ,
F. Cerrina ,
J. H. Underwood ,
P. J. Batson ,
Y. Kim ,
Y. Cho ,
C. Kisielowski ,
J. Krueger  and
E. R. Weber
G. F. Lorusso
Affiliation:
Center of X-ray Lithography, University of Wisconsin, Madison, WI
H. Solak
Affiliation:
Center of X-ray Lithography, University of Wisconsin, Madison, WI
F. Cerrina
Affiliation:
Center of X-ray Lithography, University of Wisconsin, Madison, WI
J. H. Underwood
Affiliation:
Center of X-ray Optics, Lawrence Berkeley Laboratory, Berkeley, CA
P. J. Batson
Affiliation:
Center of X-ray Optics, Lawrence Berkeley Laboratory, Berkeley, CA
Y. Kim
Affiliation:
Department of Material Science and Mineral Engineering, University of California, Berkeley, CA.
Y. Cho
Affiliation:
Department of Material Science and Mineral Engineering, University of California, Berkeley, CA.
C. Kisielowski
Affiliation:
Department of Material Science and Mineral Engineering, University of California, Berkeley, CA.
J. Krueger
Affiliation:
Department of Material Science and Mineral Engineering, University of California, Berkeley, CA.
E. R. Weber
Affiliation:
Department of Material Science and Mineral Engineering, University of California, Berkeley, CA.
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Abstract

We investigate here for the first time GaN and AIGaN films by using x-ray photoemission spectromicroscopy. As compared to conventional x-ray photoemission spectroscopy (XPS), spectromicroscopy can provide spatially resolved information on the chemical composition of the sample surface. The experimental results where obtained by using MAXIMUM, a scanning photoemission microscope installed on 12.0 undulator beamline at the Advanced Light Source (ALS), Berkelely, allowing for a spatial resolution of 100 nm. We investigate here GaN and AlGaN thin films grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The results clearly indicate the great potential of spectromicroscopy in investigating chemical inhomogeneity, inpurities and localization in GaN and AlGaN thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 393
Copyright
Copyright © Materials Research Society 1998

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References

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