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XPS and STM Studies on Initial Oxidation of Si(110)-16x2

Published online by Cambridge University Press:  01 February 2011

Maki Suemitsu ,
Hideaki Togashi ,
Atsushi Kato ,
Yuya Takahashi ,
Atsushi Konno ,
Yoshihisa Yamamoto ,
Yuden Teraoka ,
Akitaka Yoshigoe  and
Hidehito Asaoka
Maki Suemitsu
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki Aza-Aoba 6-3, Aoba-ku, Sendai, 980-8578, Japan
Hideaki Togashi
Affiliation:
[email protected], Tohoku University, Sendai, 980-8578, Japan
Atsushi Kato
Affiliation:
[email protected], Tohoku University, Sendai, 980-8578, Japan
Yuya Takahashi
Affiliation:
[email protected], Tohoku University, Sendai, 980-8578, Japan
Atsushi Konno
Affiliation:
[email protected], Tohoku University, Sendai, 980-8578, Japan
Yoshihisa Yamamoto
Affiliation:
[email protected], Tohoku University, Sendai, 980-8578, Japan
Yuden Teraoka
Affiliation:
[email protected], Japan Atomic Energy Agency (JAEA), Kouto, Sayo-cho, 679-5198, Japan
Akitaka Yoshigoe
Affiliation:
[email protected], Japan Atomic Energy Agency (JAEA), Kouto, Sayo-cho, 679-5198, Japan
Hidehito Asaoka
Affiliation:
[email protected], Japan Atomic Energy Agency (JAEA), Tokai, 319-1195, Japan
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Abstract

The initial oxidation of Si(110)-16×2 clean surface has been investigated by using real-time synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

Keywords

Sioxidationx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H01-04
Copyright
Copyright © Materials Research Society 2007

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References

1. Sato, T., Takeishi, Y., Hara, H., Okamoto, Y., Phys.Rev. B4 (1971) 1950.Google Scholar
2. Izawa, R., Kuse, T., Iijima, S., IEDM Tech. Dig. (1987) 38.Google Scholar
3. Suemitsu, M., Kato, A., Togashi, H., Konno, A., Yamamoto, Y., Teraoka, Y., Yoshigoe, A., Narita, Y., and Enta, Y.: Jpn. J. Appl. Phys. 46(2007) in print.Google Scholar
4. Togashi, H., Asaoka, H., Yamazaki, T., and Suemitsu, M.: Jpn. J. Appl. Phys. Part 2, 44(2005), pp. L1377–L1380.Google Scholar
5. Grill, L., Santoni, A., Prato, S., Petaccia, L., Modesti, S., Surface. Science 474 (2001) 55.Google Scholar
6. Kim, N. D., Kim, Y. K., Park, C.-Y., Yeom, H. W., Koh, H., Rotenberg, E., Ahn, J. R.: Phys. Rev. B75 (2007) 125309.Google Scholar
7. Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., and Hollinger, G.: Phys. Rev. B38 (1998) 6084.Google Scholar
8. Togashi, H., Takahashi, Y., Kato, A., Konno, A., Asaoka, H., Suemitsu, M.: Jpn. J. Appl. Phys. 46(2007) in print.Google Scholar
9. An, T., Yoshimura, M., Ono, I., Ueda, K.: Phys. Rev. B61(2000) 3006.Google Scholar