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XAFS Characterization of Cu-Doped ZnO Films

Published online by Cambridge University Press:  15 February 2011

J. C. Mikkelsen Jr. ,
J. B. Boyce  and
F. Bridges
J. C. Mikkelsen Jr.
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. Bridges
Affiliation:
University of California at Santa Cruz, Physics Department, Santa Cruz, CA 95064
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Abstract

This paper describes x-ray absorption measurements made on 10 to 16-μm-thick films of ZnO, which contained 5 mol% CuO, and were grown by reactive sputtering. We compare our experimental near-edge and XAFS results to models for Cu-O phases and Cu incorporation into the ZnO lattice, and we conclude that roughly half of the Cu atoms are substitutional for Zn on the wurtzite lattice and the other half is in a highly disordered phase, which has an XAFS signature which is similar to disordered CuO. Our results are compared to other structural studies of Cu-doped ZnO materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 173
Copyright
Copyright © Materials Research Society 1993

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References

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