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Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

Published online by Cambridge University Press:  01 February 2011

K. Matsubara
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
A. Yamada
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
S. Ishizuka
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
H. Tampo
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
Y. Kimura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Nakamura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
M. Yonemura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
H. Nakanishi
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Niki
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
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Abstract

Zn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

[1] Ramanathan, K., Contreras, M., Perkins, C.L., S.Asher, Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J. and Duda, A., Prog. Photovolt: Res. Appl., 11, 225 (2003).Google Scholar
[2] Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., Noufi, R., Prog. Photovolt: Res. Appl., 7, 311 (1999).Google Scholar
[3] Gloeckler, M. and Sites, J.R., Thin Solid Films, in press.Google Scholar
[4] Minemoto, T., Hashimoto, Y., Shams-Kolahi, W., Satoh, T., Negami, T., Takakura, H., Hamakawa, Y., Sol. Energy Mater. Sol. Cells, 75, 121 (2003).Google Scholar
[5] Yamada, A., Matsubara, K., Sakurai, K., Ishizuka, S., Tampo, H., Fons, P. J., Iwata, K., and Niki, S., Appl. Phys. Lett., 85, 5607 (2004).Google Scholar
[6] Ishizuka, S., Sakurai, K., Yamada, A., Matsubara, K., Fons, P., Iwata, K., Nakamura, S., Kimura, Y., Baba, T., Nakanishi, H., Kojima, T., Niki, S., Sol. Energy Mater. Sol. Cells, in press.Google Scholar
[7] Matsubara, K., Tampo, H., Shibata, H., Yamada, A., Fons, P., Iwata, K., and Niki, S., Appl. Phys. Lett., 85, 1374 (2004).Google Scholar
[8] Turcu, M., Kotschau, I. M. and Rau, U., Appl. Phys. A 73, 769 (2001).Google Scholar
[9] Swank, R.K., Phys. Rev. 153, 844 (1967)Google Scholar
[10] Wilke, W. Maierhofer, Ch., Horn, K., J. Vac. Sci. Technol. B 8, 760 (1990)Google Scholar
[11] Sugiyama, M., Nakanishi, H., and Chichibu, S.F.., Jpn. J. Appl. Phys., 40, L428 (2001)Google Scholar