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Wafer Bonding for Hybrid Circuit Technology Using Solid-State Reactions

Published online by Cambridge University Press:  15 February 2011

Z. Ma ,
G. L. Zhou ,
T. C. Shen ,
M. E. Lin ,
K. C. Hsieh ,
L. H. Allen  and
H. Morkoç
Z. Ma
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
G. L. Zhou
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
T. C. Shen
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
M. E. Lin
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
L. H. Allen
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
H. Morkoç
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

In this study, we report a new wafer bonding technique for the integration of GaAs- and InP-based optical devices with prefabricated Si electronic devices in hybrid circuit technology. This technique uses a Au-Ge eutectic alloy as the bonding materials between GaAs and Si wafers, and between InP and Si wafers. This process takes advantage of the low temperature solid-state reactions at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. The bonding was carried out by annealing the samples at 280–300°C in an alloying furnace. The reliability of the joined wafers was evaluated by both cleavage test and standard thermal cycling test. The joining interfaces were characterized by scanning electron microscopy and transmission electron microscopy. The results reveal that the bonding is achieved by low temperature reactions at the GaAs/Au-Ge and InP/Au-Ge interfaces as well as solid-phase epitaxial regrowth at the Si interfaces. The joined structure has very good integrity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 314: Symposium R – Joining and Adhesion of Advanced Inorganic Materials , 1993 , 241
Copyright
Copyright © Materials Research Society 1993

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References

1. Jewell, J.L., Lee, Y.H., Scherer, A., McCall, S.L., Olson, N.S., Harbison, J.P., and Florez, L.T., Opt. Eng. 29, 210 (1990).CrossRefGoogle Scholar
2. Hasnain, C.J., Wullert, J.R., Harbison, J.P., Florez, L.T., and Stoffel, N.G., Appl. Phys. Lett. 58, 31 (1991).CrossRefGoogle Scholar
3. Bryan, R.P., Fu, W.S., and Olbright, G.R., Appl. Phys. Lett. 62, 1230 (1993).CrossRefGoogle Scholar
4. EI-Masry, N.A., Tarn, J.C.L., and Bedair, S.M., Appl. Phys. Lett. 55, 1442 (1989).Google Scholar
5. Yamaguchi, M., Sugo, M., and Itoh, Y., Appl. Phys. Lett. 53, 2293 (1988).Google Scholar
6. Cheng, H., Depuydt, J.M., Potts, J.E., and Smith, T.L., Appl. Phys. Lett. 52, 147 (1988).CrossRefGoogle Scholar
7. Lo, Y.H., Bhat, R., Hwang, D.M., Koza, M.A., and Lee, T.P., Appl. Phys. Lett. 58, 1961 (1991).Google Scholar
8. Venkatasubramanian, R., Timmons, M.L., Humphreys, T.P., Keyes, B.M., and Ahrenkiel, R.K., Appl. Phys. Lett. 60, 886 (1992).CrossRefGoogle Scholar
9. Binary Alloy Phase Diagrams, ed. Massalski, T.B., ASM, Ohio, 1986.Google Scholar
10. Ma, Z., Xu, Y., and Allen, L.H., Appl. Phys. Lett. 61, 225 (1992).Google Scholar
11. Kim, T. and Chung, D.D.L., Mat. Res. Soc. Symp. Proc. 54, 437 (1986).CrossRefGoogle Scholar
12. Kuan, T.S., Batson, P.E., Jackson, T.N., Rupprecht, H., and Wilkie, E.L., J. Appl. Phys. 54, 6952 (1983).Google Scholar