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Volatile Liquid Precursors for the Chemical Vapor Deposition (CVD) of Thin Films Containing Tungsten

Published online by Cambridge University Press:  17 March 2011

Roy G. Gordon ,
Seán Barry ,
Randy N. R. Broomhall-Dillard ,
Valerie A. Wagner  and
Ying Wang
Roy G. Gordon
Affiliation:
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138
Seán Barry
Affiliation:
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138
Randy N. R. Broomhall-Dillard
Affiliation:
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138
Valerie A. Wagner
Affiliation:
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138
Ying Wang
Affiliation:
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138
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Abstract

A new CVD process is described for depositing conformal layers containing tungsten, tungsten nitride or tungsten oxide. A film of tungsten metal is deposited by vaporizing liquid tungsten(0) pentacarbonyl 1-methylbutylisonitrile and passing the vapors over a surface heated to 400 to 500 °C. This process can be used to form gate electrodes compatible with ultrathin dielectric layers. Tungsten nitride films are deposited by combining ammonia gas with this tungsten-containing vapor and using substrates at temperatures of 250 to 400 °C. Tungsten nitride can act as a barrier to diffusion of copper in microelectronic circuits. Tungsten oxide films are deposited by adding oxygen gas to the tungsten-containing vapor and using substrates at temperatures of 200 to 300 °C. These tungsten oxide films can be used as part of electrochromic windows, mirrors or displays. Physical properties of several related liquid tungsten compounds are described. These low-viscosity liquids are stable to air and water. These new compounds have a number of advantages over tungsten-containing CVD precursors used previously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D9.12.1
Copyright
Copyright © Materials Research Society 2000

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