Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T23:53:12.791Z Has data issue: false hasContentIssue false
  • English
  • Français

Variations Of Fractal Dimension During the Phase Transformation To The Silucide Nucleation in Thin Film Systems

Published online by Cambridge University Press:  21 February 2011

Nam-Lhn Cho  and
H. Gin Nam
Nam-Lhn Cho
Affiliation:
Department of Electronic Enginering, Sung Hwa University San 7, Galsan 1–ri, Tangjeong–myun, Asan–goon, Chungnam Republic of Korea 337–840
H. Gin Nam
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research Institute, Daedog P.O. Box 8, Daejeon Republic of Korea 305–606
Get access

Abstract

Detailed relationship between the fractal dimension and the excess noise frequency exponent has been considered for metal-silicon interfacial structures during the phase transformation to the initial compound phase formation in thin film systems. In the estimation of the fractal dimension of the thin film structures, a technique has been used, which basically employs a digital image processing of highly magnified micrographs of the structures. Previously measured frequency exponent data of the excess noise power spectral density for the same thin film systems has been interpreted by introducing a multiplication process which combines the fractal dimension variations and cluster interactions of the interfaces. It has been assumed that the fractal dimension plays a role as a multiplication factor in the multiplication process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 347
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hiraki, A., Surface Science, 168, 74 (1986).Google Scholar
2. Chu, C.L., Saraswat, C., and Wong, S.S., IEEE Elec. Dev., 39, 10, 2333 (1992).Google Scholar
3. Walser, R.M. and Bené, R.W., Appl. Phys. Lett., 28, 10, 624 (1976).Google Scholar
4. Tsaur, B.Y., Lau, S.S., Mayer, J.W., and Nicolet, M.A., Appl. Phys. Lett., 38, 11, 922 (1981).Google Scholar
5. Bené, R.W., J. Appl. Phys., 61, 5, 1826 (1987).Google Scholar
6. Han, C.C. and , Bené, Appl. Phys. Lett., 47, 10, 1077 (1985).Google Scholar
7. Chung, I.S., Nam, H.J., and Bene, R.W., accepted for publication in Thin Solid Films (1993).Google Scholar
8. Bené, R.W., Lee, G.S., and Cho, N.I., Thin Solid Films, 129, 195 (1985).Google Scholar
9. Cho, N.I. and Bené, R.W., J. Appl. Phys., 66, 5, 2037 (1989).Google Scholar
10. Satoh, K., Kobayashi, T., and Yana, K., in Noise in Physical Systems and 1/f Fluctuations edited by Musha, T., Sato, S., and Yamamoto, M. (1991) pp. 505–508.Google Scholar
11. Lovejoy, S., Science, 216, 185 (1982).Google Scholar
12. Liu, S.H., Solid State Phys., 39, 207 (1986).Google Scholar
13. Ngai, K.L., Phys. Rev. B 22, 4, 2066 (1980).Google Scholar
14. Hill, R.M., Thin Solid Films, 125, 277, (1985).Google Scholar
15. Ngai, K.L. and Liu, F.S., Phys. Rev., B 24, 2, 1049 (1981).Google Scholar