Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T12:57:06.620Z Has data issue: false hasContentIssue false
  • English
  • Français

Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces

Published online by Cambridge University Press:  23 September 2013

Sean W. King ,
Marc French ,
Milt Jaehnig  and
Markus Kuhn
Sean W. King
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Marc French
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Milt Jaehnig
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Markus Kuhn
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Get access

Abstract

In order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.

Keywords

x-ray photoelectron spectroscopy (XPS)electronic structureplasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1576: Symposium WW – Nuclear Radiation Detection Materials , 2013 , mrss13-1576-ww04-08
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Thevenot, F., J. Eur. Ceram. Soc. 6, 205 (1990).CrossRefGoogle Scholar
Sezer, A. and Brand, J., Mat. Sci. Engr. B 79, 191 (2001).Google Scholar
Kumashiro, Y., J. Mater. Res. 5, 2933 (1990).CrossRefGoogle Scholar
Caruso, A., J. Phys.: Condens. Matter. 22, 443201 (2010).Google Scholar
Loh, K., Gamo, M., Sakaguchi, I., Taniguchi, T., and Ando, T., Appl. Phys. Lett. 72, 3023 (1998).CrossRefGoogle Scholar
Sugino, T., Etou, Y., Tai, T., and Mori, H., Appl. Phys. Lett. 80, 649 (2002).CrossRefGoogle Scholar
Hoglund, C., Birch, J., Andersen, K., Bigault, T., Buffer, J., Correa, J., van Esch, P., Guerard, B., Hall-Wilton, R., Jensen, J., Khaplanov, A., Piscitelli, F., Vettier, C., Vollenberg, W., and Hultman, L., J. Appl. Phys. 111, 104908 (2012).Google Scholar
Bruijn, S., van de Kruijs, R., Yaksin, A., and Bijkerk, F., J. Appl. Phys. 111, 64303 (2012).CrossRefGoogle Scholar
Goossens, A. and Schoonman, J., Electrochim. Acta 40, 1339 (1995).CrossRefGoogle Scholar
Nemanich, R., Benjamin, M., Bozeman, S., Bremser, M., King, S., Ward, B., Davis, R., Chen, B., Zhang, Z., and Bernholc, J., Mater. Res. Soc. Symp. Proc. 395, 777 (1996).CrossRefGoogle Scholar
Lee, S. and Dowben, P., Appl. Phys. A 58, 223 (1994).Google Scholar
Jafar, M., Semicond. Sci. Technol. 18, 7 (2002).Google Scholar
King, S., French, M., Jaehnig, M., Kuhn, M., Xu, G., and French, B., Appl. Phys. Lett. 101, 42903 (2012).CrossRefGoogle Scholar
King, S., French, M., Jaehnig, M., and Kuhn, M., ECS J. Solid State Sci. Technol. 1, P250 (2012).CrossRefGoogle Scholar
Bao, R., Chrisey, D., and Cherniak, D., J. Mater. Res. 26, 867 (2011).CrossRefGoogle Scholar
Schulz, D., Lutfurakhmanov, A., Mayo, B., Sandstrom, J., Bunzow, D., Qadri, S., Bao, R., Chrisey, D., and Caruso, A., J. Non-Cryst. Sol. 354, 2369 (2008).CrossRefGoogle Scholar
Bao, R. and Chrisey, D., Thin Solid Films 519, 164 (2010).CrossRefGoogle Scholar
King, S., French, M., Jaehnig, M., Kuhn, M., Boyanov, B., and French, B., J. Vac. Sci. Technol. B 29, 52107 (2011).CrossRefGoogle Scholar
King, S., Chu, R., Xu, G., and Huening, J., Thin Solid Films 518, 4898 (2010).CrossRefGoogle Scholar
King, S., Bielefeld, J., French, M., and Lanford, W., J. Non-Cryst. Sol. 357, 3602 (2011).CrossRefGoogle Scholar
King, S., French, M., Bielefeld, J., and Lanford, W., J. Non-Cryst. Sol. 357, 2970 (2011).CrossRefGoogle Scholar
Kraut, E., Grant, R., Waldrop, J., and Kowalczyk, S., Phys. Rev. Lett. 44, 1620 (1980).CrossRefGoogle Scholar
King, S., Davis, R., Ronning, C., Benjamin, M., and Nemanich, R., J. Appl. Phys. 86, 4483 (1999).CrossRefGoogle Scholar
King, S., Davis, R., Ronning, C., and Nemanich, R., J. Electron. Mater. 28, L34 (1999).CrossRefGoogle Scholar
King, S., Benjamin, M., Nemanich, R., Davis, R., and Lambrecht, W., Mater. Res. Soc. Symp. Proc., 395, 375 (1996).CrossRefGoogle Scholar
King, S., Smith, L., Barnak, J., Ku, J., Christman, J., Benjamin, M., Bremser, M., Nemanich, R., Davis, R., Mater. Res. Soc. Symp. Proc. 395, 739 (1996).CrossRefGoogle Scholar
King, S., Ronning, C., Davis, R., Busby, R., Nemanich, R., J. Appl. Phys. 84, 6042 (1998).CrossRefGoogle Scholar
Tegeler, E., Kosuch, N., Wiech, G., and Faessler, A., Phys. Stat. Sol. B 91, 223 (1979).CrossRefGoogle Scholar
Ronning, C., Schwen, D., Eyhusen, S., Vetter, U., and Hofsass, H., Surf. Coat. Technol. 158, 382 (2002).CrossRefGoogle Scholar
Kunzli, H., Gantenbein, P., Steiner, R., and Oelhafen, P., Fresenius J. Anal. Chem. 346, 41 (1993).CrossRefGoogle Scholar
Chambers, S., Liang, Y., Yu, Z., Droopad, R., Ramdani, J., and Eisenbeiser, K., Appl. Phys. Lett. 77, 1662 (2000).CrossRefGoogle Scholar
Chen, L., Goto, T., Hirai, T., and Amano, T., J. Mater. Sci. Lett. 9, 997 (1990).CrossRefGoogle Scholar
Ahmad, A., Ianno, N., Snyder, P., Welipitiya, D., Byun, D., and Dowben, P., J. Appl. Phys. 79, 864 (1996).CrossRefGoogle Scholar