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Valence Band Discontinuity at and Near The SiO2/Si(111) Interface

Published online by Cambridge University Press:  10 February 2011

Hiroshi Nohira  and
Takeo Hattori
Hiroshi Nohira
Affiliation:
Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan, [email protected]
Takeo Hattori
Affiliation:
Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan, [email protected]
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Abstract

The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600–850°C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 421
Copyright
Copyright © Materials Research Society 1997

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References

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