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UV Laser Deposition of Thin Films at 248 NM for Phase Shifting Mask Repair

Published online by Cambridge University Press:  21 February 2011

Janos Farkas ,
Paul B. Comita ,
Vlad Novotny ,
Dolores Miller ,
Baurui yeng  and
Martin Cohen
Janos Farkas
Affiliation:
IBM Almadén Research Center, 650 Harry Road, San Jose, CA 95120
Paul B. Comita
Affiliation:
IBM Almadén Research Center, 650 Harry Road, San Jose, CA 95120
Vlad Novotny
Affiliation:
IBM Almadén Research Center, 650 Harry Road, San Jose, CA 95120
Dolores Miller
Affiliation:
IBM Almadén Research Center, 650 Harry Road, San Jose, CA 95120
Baurui yeng
Affiliation:
Quantronix Corp., 45 Adams Ave., Hauppauge, NY, 11788
Martin Cohen
Affiliation:
Quantronix Corp., 45 Adams Ave., Hauppauge, NY, 11788
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Abstract

Laser-induced deposition of controlled quality silicon dioxide and thin metallic films was investigated at 248 nm for phase shifting mask (PSM) repair. SiOx (x-1.5-2) films were deposited from single precursors, such as triethoxyvinylsilane (TEVS), tetraallyloxysilane (TAOS), di-t-butoxy-diacetooxysilane (TBSA) with no oxidizing coreactant. A deposition rate of 0.25 A/pulse was possible at room temperature, with excellent optical properties (n-1.47, k-0.05). Metallic films were deposited from tungsten, gold, molybdenum and chromium compounds. The results showed that the optical transmission and phase-shifting properties of the deposits can be matched well to the films commonly used in phase shifting masks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 565
Copyright
Copyright © Materials Research Society 1995

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