Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-08T02:08:36.121Z Has data issue: false hasContentIssue false
  • English
  • Français

Using High Frequency LIMM to characterize the poling state of piezoelectric ceramic thin films

Published online by Cambridge University Press:  15 July 2015

Mark Stewart  and
Markys G Cain
Mark Stewart
Affiliation:
Functional Materials Group, National Physical Laboratory, Teddington, TW11 0LW, UK
Markys G Cain
Affiliation:
Functional Materials Group, National Physical Laboratory, Teddington, TW11 0LW, UK
Get access

Abstract

The Laser Intensity Modulation Method, LIMM, has been used to investigate the poling state of ceramic piezoelectric thin films. The frequency of the system has been extended to 70MHz to enable films of thicknesses down to 100nm to be measured. A unique development has been to sweep the DC bias applied to the sample whilst performing the LIMM measurement, thus giving pseudo PE loops. These PE loops are unique in that they represent the polarization state within a distinct depth of the film, whereas normally PE loops are a result of the complete film. This allows us to investigate processes occurring within different regions of the film.

Keywords

piezoelectricferroelectricelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2131625
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lang, S. B. and Das-Gupta, D.K., J. Appl. Phys. 59, 2151 (1986).10.1063/1.336352CrossRefGoogle Scholar
Ploss, B., Hassler, W., Hulz, H., and Kobernik, G., Appl. Ferroelectr. 1998. ISAF 98. Proc. Elev. IEEE Int. Symp. 207 (1998).Google Scholar
Suchaneck, G., Koehler, R., Sandner, T., Gerlach, G., Deineka, A., Jastrabik, L., Kosarev, A.I., and Andronov, A.N., Integr. Ferroelectr. 32, 169 (2001).10.1080/10584580108215688CrossRefGoogle Scholar
Lang, S.B., Integr. Ferroelectr. 27, 119 (1999).10.1080/10584589908228461CrossRefGoogle Scholar
Bauer, S. and Ploss, B., J. Appl. Phys. 68, 6361 (1990).10.1063/1.346882CrossRefGoogle Scholar
Bravina, S., Morozovsky, N., Guiffard, B., Lebrun, L., and Guyomar, D., J. Am. Ceram. Soc. 91, 2223 (2008).10.1111/j.1551-2916.2008.02461.xCrossRefGoogle Scholar
Lang, S.B., Ferroelectrics 93, 87 (1989).10.1080/00150198908017328CrossRefGoogle Scholar
Lienhard, D., Heepmann, F., and Ploss, B., Microelectron. Eng. 29, 101 (1995).10.1016/0167-9317(95)00124-7CrossRefGoogle Scholar