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Uniaxial Stress Effects On Valence Band Structures Of GaN

Published online by Cambridge University Press:  10 February 2011

A. A. Yamaguchi ,
Y. Mochizuki ,
C. Sasaoka ,
A. Kimura ,
M. Nido  and
A. Usui
A. A. Yamaguchi
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, lbaraki 305 Japan, [email protected]
Y. Mochizuki
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, lbaraki 305 Japan, [email protected]
C. Sasaoka
Affiliation:
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
A. Kimura
Affiliation:
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
M. Nido
Affiliation:
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
A. Usui
Affiliation:
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
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Abstract

Valence band modification by uniaxial stress in GaN is investigated by reflectance spectroscopy. It is observed that the energy separation between the A and B valence bands increases with the applied uniaxial stress in the c-plane. Changes of the wavefunctions by the stress are also investigated by the polarization characteristics of the reflectance spectra. The experimental results are analyzed on the basis of k•p theory, and deformation potential D5 is experimentally determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 893
Copyright
Copyright © Materials Research Society 1998

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