Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-08T00:26:13.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultraviolet (UV) Irradiation Effect on Minority-Carrier Recombination Lifetime in Silicon Wafers with Oxide and Nitride Films

Published online by Cambridge University Press:  21 February 2011

L. Zhong  and
F. Shimura
L. Zhong
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
F. Shimura
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

A new method based upon photoconductance measurement of the minority-carrier recombination lifetime is developed to investigate defects both in dielectric films and on the interface. In this method, surface recombination process in silicon substrate is used as a probe to detect the interface traps generated by ultraviolet (UV) irradiation as well as the defects in a film whose electronic state can be excited by UV irradiation. A variety of films, including native, chemical vapor deposited (CVD) and thermal oxide as well as CVD nitride, have been studied. In CVD nitride, for example, evidence is provided that K-centers, the main charge trapping defects, have a negative correlation energy (negative-U).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 471
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Many, A., Goldstein, Y., and Grove, N.B., Semiconductor Surface. (North Holland, Amsterdam, 1965), p. 128 &p.l97.Google Scholar
2 Caplan, P. J.,Poindexter, E.H., and Morrison, A. R., J. Appl. Phys. 53, 541 (1982).CrossRefGoogle Scholar
3 Tober, E.D., Kanicki, J. and Crowder, M.S., Appl. Phys. Lett. 59, 1723(1991).Google Scholar
4 Warren, W.L., Kanicki, J., Rong, F.C., Poindexter, E.H., and McWhorter, P.J., Appl.Phys.Lett. 61, 216(1992).Google Scholar
5 Shimura, F., Okui, T., and Kusama, T., J. Appl. Phys. 67, 7168(1990).CrossRefGoogle Scholar
6 DiMaria, D.J., Cartier, E., and Arnold, D., J.Appl.Phys. 73, 3367(1993).Google Scholar
7 Winokur, P.S., in Ionization Radiation Effects in MOS Devices and Circuits, edited by Ma, T.P. and Dressendorfer, P.V., (Wiley-Interscience, New York, 1989), Chap.4.Google Scholar
8 Zekeriya, V. and Ma, T.P., Appl.Phys.Lett. 40, 709(1982).Google Scholar
9 Zhong, L. and Shimura, F., Appl.Phys.Lett. (to be published).Google Scholar
10 Zhong, L., Buczkowski, A., Katayam, K. and Shimura, F.,Appl. Phys. Lett. 61, 931(1992).Google Scholar
11 Zhong, L. and Shimura, F., Appl. Phys. Lett. 62, 615(1993).Google Scholar
12 Zhong, L. and Shimura, F., J. Appl.Phys. 74, 7311(1993).Google Scholar
13 Zhong, L. and Shimura, F., Appl. Phys. Lett. 63, 1246(1993).CrossRefGoogle Scholar