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Ultra-shallow Junction Formation via GeB- ion Implantation of Si

Published online by Cambridge University Press:  17 March 2011

Xinming Lu ,
Lin Shao ,
Jianyue Jin ,
Qinmian Li ,
I. Rusakova ,
Q. Y. Chen ,
Jiarui Liu ,
Wei-Kan Chu  and
Peiching Ling
Xinming Lu
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Lin Shao
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Jianyue Jin
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Qinmian Li
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
I. Rusakova
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Q. Y. Chen
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Jiarui Liu
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Wei-Kan Chu
Affiliation:
Department of Physics and Texas Center for Superconductivity at University of Houston, Houston, TX 77204, U.S.A
Peiching Ling
Affiliation:
Advanced Materials Engineering Research, Inc., Sunnyvale, CA 94086, U.S.A
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Abstract

GeB− Cluster ions have been used to effectively produce 0.65-2keV boron for low energy ion implantation. We have generated the GeB− cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB− cluster ions implanting into Si substrates at 15keV, 1×1015/cm2 and 5keV, 5×1014/cm2. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000°C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB− ion cluster implanted Si by annealing the 15 keV implanted sample at 550°C/300sec+1000°C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.5
Copyright
Copyright © Materials Research Society 2000

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