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Ultra-Shallow Diffused Emitter-Base Profiles Fabricated by Rapid Thermal Processing for High Speed Bipolar Devices

Published online by Cambridge University Press:  25 February 2011

J. E. Urner ,
C. I. Drowley ,
P. Vande Voorde  and
A. Kermani
J. E. Urner
Affiliation:
*Hewlett Packard, Circuit Technology Research and Development, 3500 Deer Creek Rd, Palo Alto, CA 94304
C. I. Drowley
Affiliation:
*Hewlett Packard, Circuit Technology Research and Development, 3500 Deer Creek Rd, Palo Alto, CA 94304
P. Vande Voorde
Affiliation:
*Hewlett Packard, Circuit Technology Research and Development, 3500 Deer Creek Rd, Palo Alto, CA 94304
A. Kermani
Affiliation:
Rapro Technology, 47835 Westinghouse Blvd, Fremont, CA 94539, formerly at Peak Systems, 3500 West Warren Ave., Fremont, CA 94538
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Abstract

The development of next-generation high-speed bipolar devices depends critically on reproducible shallow dopant profiles, with base and emitter widths considerably less than 1000 Angstroms. Sequential diffusion of boron and arsenic from implanted polysilicon is a promising means of producing such shallow emitter-base profiles. The restricted thermal budget required to reproducibly form such shallow junctions severely limits the use of conventional furnaces. We report the formation of extremely shallow emitter-base profiles using rapid thermal processing (RTP) in a double-diffused polysilicon emitter process. Polysilicon was implanted with various doses of BF2 and subjected to a conventional furnace anneal at 900ºC. This process was followed by As implantation and furnace anneal at 900ºC or RTP at 10500C or 1100ºC. A range of emitter-base profiles was generated with emitter and base widths ranging from 350-800A. Emitter-base profiles were measured using low-energy Secondary Ion Mass Spectrometry (SIMS), after removal of the polysilicon to improve depth resolution. Deconvolution of the instrumental broadening function allowed extraction of base and emitter widths as well as the boron concentration in the base. Variation of the profiles is discussed as a function of anneal times and implant dose. Modified SUPREM III parameters are obtained for diffusivities under these RTP conditions. The implications for high speed bipolar device fabrication will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 365
Copyright
Copyright © Materials Research Society 1989

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References

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