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Ultrafast Aqueous Etching of Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

A. E. Willner ,
D. V. Podlesnik ,
H. Gilgen  and
R. M. Osgood Jr
A. E. Willner
Affiliation:
Microelectronics Sciences Laboratories Columbia University New York, New York 10027
D. V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories Columbia University New York, New York 10027
H. Gilgen
Affiliation:
Microelectronics Sciences Laboratories Columbia University New York, New York 10027
R. M. Osgood Jr
Affiliation:
Microelectronics Sciences Laboratories Columbia University New York, New York 10027
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Abstract

Very rapid room-temperature photochemical etching of n-type GaAs was achieved in aqueous hydrofluoric acid in conjunction with ultraviolet laser illumination. The etch rates of ˜500 μm/min represent an order of magnitude increase in etch rates over previously reported results for solutions that contained no hydrofluoric acid. Furthermore, incorporation of nitric acid into the hydrofluoric acid solution resulted in smooth etched surfaces thus allowing deep, waveguiding etching. This rapid process was used to etch deep, large-area structures in GaAs samples.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 403
Copyright
Copyright © Materials Research Society 1987

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