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Two-Step Capacitance Transients From an Oxygen Impurity Defect

Published online by Cambridge University Press:  01 February 2011

Shouvik Datta ,
J. David Cohen ,
Yueqin Xu  and
Howard M. Branz
Shouvik Datta
Affiliation:
[email protected], University of Oregon, Physics, 1371 E 13th Avenue, Eugene, OR, 97403, United States, 541-346-4774, 541-346-3422
J. David Cohen
Affiliation:
[email protected], University of Oregon, Department of Physics, 1371 E 13th Avenue, Eugene, OR, 97403, United States
Yueqin Xu
Affiliation:
[email protected], National Renewable Energy Laboratory, Silicon Materials Group, 1617 Cole Boulevard, Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
[email protected], National Renewable Energy Laboratory, Silicon Materials Group, 1617 Cole Boulevard, Golden, CO, 80401, United States
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Abstract

This paper describes the study of an electron-trapping defect which underwent significant configurational relaxation in oxygen contaminated hydrogenated amorphous silicon-germanium (a-Si,Ge:H) alloys grown by hot-wire chemical vapor deposition. An unusual two-step electron emission from this relaxed defect is studied using junction-capacitance-based measurements. In this work, we monitor the recovery of the relaxed defect after filling it by photoexcited electrons and also by electrons injected with a voltage filling pulse. The dependence of the transient shape on filling pulse time is described. We have also performed experiments which clearly demonstrate that this is a bulk defect and exclude contributions from any additional blocking junctions.

Keywords

amorphousSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A10-03
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Datta, Shouvik, Xu, Yueqin, Mahan, A. H. Branz, Howard M., and David Cohen, J., Mat. Res. Soc. Symp. Proc 989, A4.3 (2007).Google Scholar
[2] Datta, Shouvik, Xu, Yueqin, Branz, Howard M., and David, J. Cohen, 22nd International Conference of Amorphous Semiconductors, Colorado, USA, August 2007. J. Non Cryst. Solids. 354, 2126 (2008).Google Scholar
[3] Anderson, P. W. Phys. Rev. Lett. 34, 953 (1975).Google Scholar
[4] Street, R. A. and Mott, N. F. Phys. Rev. Lett. 35, 1293 (1975).Google Scholar
[5] Gelatos, A.V. Mahavadi, K.K. Cohen, J.D. and Harbison, J.P. Appl. Phys. Lett. 53, 403 (1988).Google Scholar
[6] Cohen, J. David and Gelatos, Avgerinos V., in Amorphous Silicon and Related Materials, Vol. A, ed. by Fritzsche, Hellmut (World Scientific, Singapore, 1989), p 475.Google Scholar
[7] Lucovsky, G., Yang, J., Chao, S. S. Tyler, J. E. and Czubatyj, W., Phys. Rev. B. 28, 3225 (1983).Google Scholar
[8] Shimizu, Tatsuo, Matsumoto, Minoru, Yoshita, Masahiro, Iwami, Masahiko, Morimoto, Akiharu, and Kumeda, Minoru, J. Non-Cryst. Solids. 137&138, 391 (1991).Google Scholar
[9] Fritzsche, H., J. Non-Cryst. Solids. 190, 180 (1995).Google Scholar
[10] Adler, David, Solar cells. 9, 133 (1983).Google Scholar
[11] Lang, D. V. J. Applied Physics, 45, 3014 (1974).Google Scholar
[12] Miller, G. L. Lang, D. V. and Kimmerling, L. C. Ann. Rev. Mater. Sci. 7, 377 (1977).Google Scholar