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Two-Dimensional Ordering of Ion Damaged Graphite

Published online by Cambridge University Press:  25 February 2011

B.S. Elman ,
S. Dresselhaus ,
G. Braunstein ,
G. Dressflhaus ,
T. Venkatesan ,
B. Wilkens  and
J.M. Gibson
B.S. Elman
Affiliation:
Center for Materials Science and Engineering; Department of Physics;
S. Dresselhaus
Affiliation:
Center for Materials Science and Engineering; Department of Physics; Department of Electrical Engineering and Computer Science;
G. Braunstein
Affiliation:
Department of Physics;
G. Dressflhaus
Affiliation:
Francis Bitter National Magnet Laboratory;Massachusetts Institute of Technology, Cambridge, MA 02139;
T. Venkatesan
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, USA
B. Wilkens
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, USA
J.M. Gibson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, USA
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Abstract

Post implantation annealing of ion-damaged, highly oriented pyrolytic graphite (HOPG) has been studied by Raman spectroscopy, the ion channeling technique and Transmission Electron Microscopy. Complementary information obtained by these methods provides confirmation for the completion of the first step of graphitization of iondamaged graphite at annealing temperatures of ~2300°C. This is manifested by the formation of carbon planes with two dimensional ordering but no correlation in the third (c-axis) dimension.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 461
Copyright
Copyright © Materials Research Society 1984

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References

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