Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-02-04T17:45:22.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Two Step Growth and Characterization of BaF2/Si(III) Heterostructures

Published online by Cambridge University Press:  21 February 2011

A. Belenchuk ,
A. Fedorov ,
V. Lucash ,
A. Vasilyev  and
V. Zenchenco
A. Belenchuk
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
A. Fedorov
Affiliation:
Institute of Device Technology, Kharkov, Ukraina
V. Lucash
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
A. Vasilyev
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
V. Zenchenco
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
Get access

Abstract

The influence of growth conditions on structural perfections and epitaxial relation in BaF2 films on Si(111) are considered. It is shown that rotational-twin-free BaF2 films (A-type orientation) can be grown on Si(111) by two step growth method. It is also shown that a mixed (A+B)-type orientation, which usually observed in BaF2 films grown by conventional one step growth method, can be converted into A-type orientation by postgrowth annealing. The correlation between type of epitaxial orientation in BaF2 films and structures of interface is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 337
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Asano, T., Ishiwara, H., Kaifu, N.. Jpn. J. Appl. Phys. 22, 1474 (1983).Google Scholar
2. Schowalter, L.J., Fathauer, R.W., Ponce, F.A., Anderson, G. and Nashimoto, S. in Heteroepitaxy on Silicon , edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Proc. 67, Pittsburgh, PA, 1986),pp. 125–133.Google Scholar
3. Mizukami, H., Ono, A., Tsutsui, K. and Furukawa, S., Mat.Res.Soc.Symp. Proc. 237, 505 (1992).Google Scholar
4. Ohmi, S., Tsutsui, K., Furukawa, S., Jpn. J. Appl. Phys. 33, 1121 (1994).Google Scholar
5. Belenchuk, A., Fedorov, A., Lukash, V. and Zenchenko, V. in Proc. 17th Ann. Sem. Conf., Sinaia, Romania, 1994, pp.643–646.Google Scholar
6. Nath, K., Anderson, A., Phys. Rev. B, 38, 8264 (1988).Google Scholar