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Tunneling Current in Thin Silicon Dioxide Films

Published online by Cambridge University Press:  22 February 2011

Sufi Zafar ,
J. C. Poler ,
E. A. Irene ,
X. Xu ,
G. Haines ,
R. Kuehn  and
J. J. Wortman
Sufi Zafar
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
J. C. Poler
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
E. A. Irene
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
X. Xu
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
G. Haines
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
R. Kuehn
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
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Abstract

Tunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

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References

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