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Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure
Published online by Cambridge University Press: 31 March 2014
Abstract
We use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.
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- Copyright © Materials Research Society 2014