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Tunable Thin Film Integrated Material Characterizations for Microwave Applications

Published online by Cambridge University Press:  01 February 2011

Mahmoud Al Ahmad
Affiliation:
[email protected], LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, N/A, France
Sandrine Payan
Affiliation:
Université de Bordeaux, ICMCB CNRS, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Dominique Michau
Affiliation:
Université de Bordeaux, ICMCB CNRS, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Mario Maglione
Affiliation:
[email protected], ICMCB CNRS, Université de Bordeaux, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Robert Plana
Affiliation:
LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, France
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Abstract

In this work, a simple, fast and repeatable technique is proposed for tunable integrated thin film material characterizations. The technique does not depend on the type of material development method or special thin film processing. Moreover, additional structures or calibrations are not required. The proposed method can be used to determine the loss of a thin film material using radio frequency capacitance measurements in both parallel plate and interdigital topologies. An analytical formulation is given for the computation of the film loss based on its measured input impedance which is extracted from the measured scattering parameters. This technique is used for barium strontium titanate (BST) thin film material characterizations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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