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A Trial for Micro-Scale Evaluation of Adhesion Strength around Cu Metallization Systems

Published online by Cambridge University Press:  01 February 2011

Shoji Kamiya
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, N/A, Japan, 0527355324, 0527355324
Hitoshi Arakawa
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Hiroshi Shimomura
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Masaki Omiya
Affiliation:
[email protected], Keio University, Department of Mechanical Engineering, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
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Abstract

Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Charalambides, P. G., Lund, J., Evans, A.G., McMeeking, R. M., J. Appl. Mech., 56, 77(1989).Google Scholar
2 Lane, M. W., Dauskardt, R. H., Mater, J.. Res., 15, 2758 (2000).Google Scholar
3 Dauskardt, R. H., Lane, M., Ma, Q., Krishna, N., Eng. Fract. Mech., 61, 141 (1998).Google Scholar
4 Lane, M. W., Liniger, E. G., Lloyd, J. R., J. Appl. Phys., 93, 1417 (2003).Google Scholar
5 Kamiya, S., Nagasawa, H., Yamanobe, K., Hanyu, H., Saka, M., Thin Solid Films, 469/470, 248 (2004).Google Scholar
6 Kamiya, S., Nagasawa, H., Yamanobe, K., Saka, M., Thin Solid Films, 473, 123 (2005).Google Scholar
7 Kamiya, S., Suzuki, S., Yamanobe, K., Saka, M., J. Appl. Phys., 99, 034503–1 (2006).Google Scholar
8 Park, D. M., Int. J. Fract., 10, 487 (1974).Google Scholar
9 Merill, C. P., Ho, P. S., Mater. Res. Soc. Proc., Paper # F5.7.Google Scholar
10 Cui, Z., Dixit, G., Xia, L. -Q., Demos, A., Kim, B. H., Witty, D., M”saad, H., Dauskardt, R. H., Characterization and Metrology for ULSI Technology, edited by Seiler, D. G., Diebold, A. C., McDonald, R., Ayre, C.R., Khosla, R. P., Zollner, S., Secula, E. M., 507 (2005).Google Scholar