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Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Mo Ahoujja ,
S Elhamri ,
M Hogsed ,
Y. K. Yeo  and
R. L. Hengehold
Mo Ahoujja
Affiliation:
[email protected], University of Dayton, Physics, 300 College Park, Dayton, OH, 45469, United States
S Elhamri
Affiliation:
[email protected], University of Dayton, Physics, 300 College Park, Dayton, OH, 45469, United States
M Hogsed
Affiliation:
[email protected], AFIT, ENP, WPAFB, Dayton, OH, 45433, United States
Y. K. Yeo
Affiliation:
[email protected], AFIT, ENP, WPAFB, Dayton, OH, 45433, United States
R. L. Hengehold
Affiliation:
[email protected], AFIT, ENP, WPAFB, Dayton, OH, 45433, United States
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Abstract

Deep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

Keywords

deep level transient spectroscopy (DLTS)nitridedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-30
Copyright
Copyright © Materials Research Society 2007

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