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Transport Studies of Transition Metal Ion Doped ZnO: Bulk and Thin Films

Published online by Cambridge University Press:  01 February 2011

Shubra Singh ,
N Rama  and
M.S. Ramachandra Rao
Shubra Singh
Affiliation:
[email protected], Indian Institute of Technology, Madras, Department of Physics, Chennai 600 036, India
N Rama
Affiliation:
[email protected], Indian Institute of Technology, Madras, Department of Physics, Chennai, 600 036, India
M.S. Ramachandra Rao
Affiliation:
[email protected], Indian Institute of Technology, Madras, Department of Physics, Chennai, 600 036, India
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Abstract

The effect of doping of transition metal ions (Fe and Co) on transport properties of ZnO has been studied in both bulk and thin films. The solubility limit of these ions have been found to be higher in thin films compared to bulk. Optical measurements reveal the presence of Fe in both 2+ and 3+ state. Co is believed to be in 2+ states. Electrical resistivity measurements show that while for bulk Fe doped ZnO samples there is a decrease in resistivity compared to undoped ZnO, it increases for bulk Co doped ZnO samples. However, thin film samples of both types of doped compounds show a decrease in resistivity compared to undoped ZnO. This difference in bulk and thin film behaviour has been explained on the basis of experimental results.

Keywords

thin filmFeCo
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-43
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).Google Scholar
[2] Sato, K. and Katayama-Yoshida, H., Semicond. Sci. Tech. 17, 367 (2002).Google Scholar
[3] Venkatesan, M., Fitzgerald, C. B., Lunney, J. G., and Coey, J. M. D., Phys. Rev. Lett. 93, 177206 (2004).Google Scholar
[4] Shim, J. H., Hwang, T., Lee, S., Park, J.H., Han, S.-J., and Jeong, Y.H., Appl. Phys. Lett. 86, 082503 (2005).Google Scholar
[5] Cho, Y.M., Choo, W.K., Kim, H., Kim, D., and Ihm, Y.E., Appl. Phys. Lett. 80, 3358 (2001).Google Scholar
[6] Lee, H. J., Jeong, S.Y., Cho, C. R., and Park, C. H., Appl. Phys. Lett. 81, 4020 (2002).Google Scholar
[7] Singh, S., Rama, N. and Rao, M.S. Ramachandra, Appl. Phys. Letts., 88, 222111 (2006)Google Scholar
[8] Hecht, H., in: Wendlandt, W. (Ed.), Modern Aspects of Reflectance Spectroscopy, Plenum Press, New York, 1968, pp. 1–22.Google Scholar
[9] Ezhilvalavan, S., Kutty, T.R.N., Journal of Materials Science Materials in electronics 7 (1996) 137–148 Google Scholar
[10] Marcino, Dionne, Cloutis, Edward, Asher, Pranoti, Strong, Johnathon, Russell, Brad, and Goltz, Doug, Lunar and Planetary Science XXXII (2001)Google Scholar
[11] Grygar, T., Dedecek, J., Kruiver, P.P., Dekkers, M.J., Bezdicka, P., Schneeweiss, O., Catena 53 (2003) 115–132 Google Scholar
[12] Tuel, A., Arcon, I. and Millet, J. M. M., J. Chem. Soc., Faraday Trans., 1998, 94, 3501 Google Scholar
[13] Heitz, R., Hoffmann, A., and Broser, I., Phys. Rev. B 45, 8977 ∼1992.Google Scholar
[14] Tominaga, K., Takao, T., Fukushima, A., Moriga, T., Nakabayashi, I., Vacuum 66 (2002) 511–515 Google Scholar
[15] Ueda, Kenji, Tabata, Hitoshi, and Kawai, Tomoji, Appl. Phys. Lett., 79, 7(2001)Google Scholar