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Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2

Published online by Cambridge University Press:  26 February 2011

Minoru Mitsui ,
Keisuke Arimoto ,
Junji Yamanaka ,
Kiyokazu Nakagawa ,
Kentarou Sawano  and
Yasuhiro Shiraki
Minoru Mitsui
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Miyamae-Cho, Kofu 400–8511, Japan.
Keisuke Arimoto
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Miyamae-Cho, Kofu 400–8511, Japan.
Junji Yamanaka
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Miyamae-Cho, Kofu 400–8511, Japan.
Kiyokazu Nakagawa
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Miyamae-Cho, Kofu 400–8511, Japan.
Kentarou Sawano
Affiliation:
The University of Tokyo, Tokyo 113–8656, Japan.
Yasuhiro Shiraki
Affiliation:
Musashi Institute of Technology, Tokyo 158–8557, Japan.
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Abstract

Transport properties of polycrystalline Si1−xGex (x = 0, 30, 50 and 70) thin films on SiO2 were studied by Hall measurements and transport properties of the TFTs fabricated on the films were characterized. Si1−xGex films were p-type in spite of non-doping. Room temperature hole densities of Si1−xGex films increased from 5 × 1013 to 5 × 1016 cm−3 as Ge concentration increased from 30 % to 70 %. The acceptor levels in Si1−xGex were located at 0.43, 0.40 and 0.34 eV for x=0.3, 0.5 and 0.7 from valence band, respectively. The high leakage current of SiGe-TFTs was observed and drain current could not be turned off even when the high gate voltage was applied. The acceptor density increased with increasing annealing temperature from 700 °C to 800 °C. The leakage currents were independent of the annealing temperature and is thought to originate from Ge-related defects in grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.22
Copyright
Copyright © Materials Research Society 2005

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References

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