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Transport of carriers in thin Metal/PS/c-Si device Structures based on Porous Silicon

Published online by Cambridge University Press:  17 March 2011

Leonid A. Balagurov ,
Sue C. Bayliss ,
Elena A. Petrova ,
Bayram Unal  and
Dmitrii G. Yarkin
Leonid A. Balagurov
Affiliation:
State Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
Sue C. Bayliss
Affiliation:
Faculty of Applied Sciences, De Montfort University, Leicester, LE1-9BH, England
Elena A. Petrova
Affiliation:
State Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
Bayram Unal
Affiliation:
Faculty of Applied Sciences, De Montfort University, Leicester, LE1-9BH, England
Dmitrii G. Yarkin
Affiliation:
State Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
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Abstract

Thin porous silicon (PS) based metal/PS/p-c-Si structures were prepared on moderate-and high- resistivity substrates. Measurements of current-voltage (I-V) dependencies and impedance at various temperatures were used for the investigation of carrier transport in these structures. The exponential forward bias I-Vdependencies for both types of structures spread over several orders of magnitude with a low value of quality factor (close to 2) and have activation temperature dependencies with an activation energy equal to half the c-Si band gap. The reverse current has a square root dependence on the reverse bias voltage and the activation energy is equal to half the c-Si band gap. Therefore, it was concluded that the reverse and forward currents in thin PS-based device structures were determined by the generation and recombination of carriers in the depletion region of the c-Si substrate. It was shown that a large area spreading current exists in structures made on highly resistive substrates, which appears to be due to a highly conductive inverse (n-type) layer formed in the c-Si substrate at the PS/c-Si heterojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.26.1
Copyright
Copyright © Materials Research Society 2001

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