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Transparent Conductive Oxide Semiconductor ZnO:Al Films Produced by Magnetron Reactive Sputtering

Published online by Cambridge University Press:  21 March 2011

Chen Meng ,
Pei Zhiliang ,
Wang Xi ,
Sun Cao  and
Wen Lishi
Chen Meng
Affiliation:
(Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China, 200050, E_mail: [email protected]) (Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Pei Zhiliang
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Wang Xi
Affiliation:
(Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China, 200050
Sun Cao
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Wen Lishi
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
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Abstract

ZnO:Al (ZAO) films were deposited on quartz substrates by dc magnetron reactive sputtering from a Zn target mixed with Al. The effect of substrate temperature and Al doping content on the structural, electrical and optical properties of ZAO films were investigated. It was observed that the (002) peak position of all films shifts to lower angle comparable to that of bulk ZnO due to the residual stress change with deposition parameters. The dependences of electrical properties such as resistivity, carrier concentration and Hall mobility on substrate temperature and Al doping content were measured. The minimum resistivity is 4.23×10−4 ω.cm with the carrier concentration of 9.21×1020 cm−3 and Hall mobility of 16.0 cm2v−1s−1. The visible transmittance of above 80% was obtained. The optical band gap was observed to increase with increasing carrier concentration. The possible mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F1.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Jin, Z.C., Hamberg, I., and Granqvist, C.G., J. Appl. Phys. 64, 5117 (1988)Google Scholar
2. Major, S., Kumar, S., Bhatnagar, M., Chopra, K.L., Appl. Phys. Lett. 40, 394 (1986)Google Scholar
3. Segmuller, A., Murakami, M., in Analytical Techniques for Thin Films, Edited by Tu, K.N. & Rosenberg, R. (Academic, Boston, 1988), pp.143 Google Scholar
4. Kuvaschewski, O. and Alocok, C.B., Metallurgical Thermochemistry, 5th ed. (Pergamon, London, 1979), pp.376 Google Scholar
5. Chen, M., Wang, X., Pei, Z.L., Sun, C., Wen, L.S., Appl. Surf. Sci. 158, 134 (2000)Google Scholar
6. Chen, M., Huang, R.F., Wen, L.S., the '99 Asian Conference on Electrochemistry, Tokyo, Japan, May 19-21, pp29, 1999 Google Scholar
7. Chen, M., Bai, X.D., Gong, J., Sun, C., Huang, R.F. and Wen, L.S., J. Mater. Sci & Tech., 16 (2000) 281 Google Scholar