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Transmutation Doping of III-Nitrides

Published online by Cambridge University Press:  10 February 2011

Galina Popovici
Galina Popovici*
Affiliation:
Rockbit International Inc, 7601 Will Rogers Blvd, Fort Worth, TX [email protected], [email protected]
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Abstract

Transmutation doping of (In, Ga, Al)N compounds by neutron irradiation is a promising and totally unexplored field to date. It is much more effective than that of Si due to large neutron capture cross section and abundance of In, Al and Ga isotopes participating in reaction. This should make the irradiation possible in low-flux reactors and result in smaller radiation damage. Annealing of the radiation damage seems feasible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 519
Copyright
Copyright © Materials Research Society 1999

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References

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