Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T23:12:25.371Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC.

Published online by Cambridge University Press:  01 February 2011

D.N. Zakharov ,
Z. Liliental-Weber ,
B. Wagner ,
Z.J. Reitmeier ,
E.A. Preble  and
R.F. Davis
D.N. Zakharov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
B. Wagner
Affiliation:
North Carolina State University, Raleigh, NC 27695
Z.J. Reitmeier
Affiliation:
North Carolina State University, Raleigh, NC 27695
E.A. Preble
Affiliation:
North Carolina State University, Raleigh, NC 27695
R.F. Davis
Affiliation:
North Carolina State University, Raleigh, NC 27695
Get access

Abstract

Pendeo-epitaxy has been applied to nonpolar a-plane GaN layers in order to observe if such process will lead to defect reduction in comparison with direct growth on this plane. Uncoalesced and coalesced a-plane GaN layers with thicknesses 2μm and 12μm, respectively, have been studied by conventional and high resolution electron microscopy. The following structural defects have been observed in pendeo-epitaxial layers: (1) basal stacking faults, (2) threading dislocations, and (3) prismatic stacking faults. A drastic decrease in the density of threading dislocations and stacking faults was observed in ‘wing’ areas with respect to ‘seed’ areas. Cross-section images reveal cracks and voids at the areas where two coalesced wings meet each other. High resolution electron microscopy shows that the majority of stacking faults are low-energy planar defects of the types I1, I2 and I3. The I3 type basal stacking fault, predicted theoretically, was observed experimentally for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.14
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Waltereit, P., Brandt, O., Trampert, A., Grahn, H. T., Menniger, J., Ramsteiner, M., Reiche, M., and Ploog, K. H., Nature 406, 865 (2000)Google Scholar
2 Craven, M. D., Waltereit, P., Feng, W., Speck, J. S., and DenBaars, S. P., Jap. J. Appl. Phys. Lett. 42, L235 (2003)Google Scholar
3 Bernardini, F. and Fiorentini, V.: Phys. Rev. B 57, 9427 (1998)Google Scholar
4 Liu, T.Y., Trampert, A., Sun, Y.J., Brandt, O., Ploog, K.H., Phil. Mag. Lett. 84, 435 (2004)Google Scholar
5 Craven, M.D., Lim, S.H., Wu, F., Speck, J.S. and DenBaars, S.P., Appl. Phys. Lett. 81, 469 (2002)Google Scholar
6 Zakharov, D.N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z.J., Preble, E.A., and Davis, R.F., Mat. Res. Symp. Proc. 798, 747 (2004)Google Scholar
7 Gibart, P., Rep. Prog. Phys. 67, 667 (2004)Google Scholar
8 Hull, D. and Bacon, D.J., Introduction to Dislocation, 3rd Ed., Intl. Series on Materials Science and Technology, (Oxford, New York, Beijing, Frankfurt, Sao Paulo, Sydney, Tokyo, Toronto: Pergamon Press, 1984), p.112 Google Scholar
9 Stampfl, C. and Walle, C.G. Van de, Phys. Rev. B 57, R15052 (1998)Google Scholar
10 Drum, C.M., Phil. Mag. 11, 313 (1965)Google Scholar