Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-12T09:39:31.352Z Has data issue: false hasContentIssue false
  • English
  • Français

Transition-Metal Impurity Luminescence in GaAs and its Application to Material Characterization

Published online by Cambridge University Press:  26 February 2011

T. Nishino
T. Nishino*
Affiliation:
Kobe University, Department of Electrical and Electronics Engineering, Rokkoudai 1–1, Nada-ku, Kobe 657, Japan
Get access

Abstract

A number of sharp characteristic luminescence lines has been observed for GaAs doped with 3d transition-metal impurities in the near-infrared region, the origin being attributed to the zero-phonon intracenter transitions between the energy levels of the metal ions split by the crystal field of the GaAs lattice. It is also known that these luminescence lines are very sensitive to the surrounding field of the transition-metal impurities. The luminescence of Cr-doped GaAs has been most extensively studied, the spectrum revealing a very sharp luminescence line at 0.839 eV. In this paper we review the results on the successful applications of this Cr-related luminescence line to characterization of in-depth profiles of arsenic vacancy in thermally annealed GaAs, local strain field in In-doped GaAs and interface stress at heterostructures grown on Cr-doped GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 263
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zunger, A., in Solid State Physics, edited by Ehrenreich, H. and Turnbull, D. (Academic Press, Orlando, 1986) vol. 39, pp. 276–464.Google Scholar
2. Uihlein, Ch. and Eaves, L., Phys. Rev. B26, 4473 (1982).Google Scholar
3. Barrou, J., Voillot, F., Brousseau, M., Brabant, J. C. and Poilblaud, G., J. Phys. C: Solid State Phys. 14, 3447 (1982).Google Scholar
4. Fujiwara, Y., Nishino, T. and Hamakawa, Y., Jpn. J. Appl. Phys. 21, L727 (1982).Google Scholar
5. Fujiwara, Y., Kojima, A., Nishino, T. and Hamakawa, Y., J. Lumin. 31&32, 451 (1984).Google Scholar
6. Fujiwara, Y., Nishino, T. and Hamakawa, Y., Appl. Phys. A41, 115 (1986).Google Scholar
7. Nishino, T., Fujiwara, Y., Kojima, A. and Hamakawa, Y., in Proc. Int. Symp. on Spectroscopic Characterization Techniques for Semiconductor Technology, Boston, 1983 (SPIE Proc. 452, Washington) pp. 2–8.Google Scholar
8. Hsu, J. T., Nishino, T. and Hamakawa, Y., Jpn. J. Appl. Phys. 26, 685 (1986).Google Scholar
9. Fujiwara, Y., Kita, Y., Tonami, Y., Nishino, T. and Hamakawa, Y., Appl. Phys. Lett. 49, 161 (1986).Google Scholar
10. Nishino, T., Fujiwara, Y. and Hamakawa, Y., in Proc. Int. Conf. on Physics of Semiconductors, Stockholm, 1986, pp. 959–962.Google Scholar
11. Nishino, T., IEEE J. Quantum Electron. 25, 1046 (1989).Google Scholar
12. Nishino, T., in Proc. Int. Conf. on Thin Film Physics and Applications, Shanghai, 1991 (SPIE Proc. 1519, Washington) pp. 382–390.Google Scholar