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Transient Photoconductivity Study of the Distribution of Gap States in 100°C VHF-deposited Hydrogenated Silicon Layers

Published online by Cambridge University Press:  01 February 2011

Monica Brinza ,
Guy J. Adriaenssens ,
Jatindra K. Rath  and
Ruud E.I. Schropp
Monica Brinza
Affiliation:
[email protected] Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy, SID – Physics of Devices, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
Guy J. Adriaenssens
Affiliation:
[email protected], University of leuven, Halfgeleiderfysica, Celestijnenlaan 200D, Leuven, B-3001, Belgium, 32 16 327 129, 32 16 327 987
Jatindra K. Rath
Affiliation:
[email protected], Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy,, SID - Physics of Devices,, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
Ruud E.I. Schropp
Affiliation:
[email protected], Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy,, SID - Physics of Devices,, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
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Abstract

The energy distribution of gap states has been examined by means of transient photocurrent measurements in a series of 100°C VHF-deposited Si:H samples that spans the amorphous to microcrystalline transition. The ‘amorphous’ distribution, consisting of a continuous background and a prominent dangling-bond-induced peak, remains largely intact across the transition. The transport path located at the conduction band edge in a-Si:H, some 0.63 eV above the dangling bond D− energy, moves down to ∼0.55 eV above the corresponding D− level in the microcrystalline samples.

Keywords

defectsphotoconductivityelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-06
Copyright
Copyright © Materials Research Society 2008

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References

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