Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-09T15:16:54.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Enhanced Diffusion and Dose Loss of Indium in Silicon

Published online by Cambridge University Press:  10 February 2011

Omer Dokumaci ,
Paul Ronsheim ,
Christopher D'emic ,
Anthony G. Domenicucci ,
Suri Hegde ,
Paul Kozlowski  and
H.-S. Philip Wong
Omer Dokumaci
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Paul Ronsheim
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Christopher D'emic
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
Anthony G. Domenicucci
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Suri Hegde
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Paul Kozlowski
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
H.-S. Philip Wong
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

The dose loss and transient enhanced diffusion of indium in silicon were studied as a function of dose. Indium was implanted into silicon through a 90 A oxide at 50 keV for doses ranging from 3x 1012 to 2x14 cm−2. These conditions provide peak concentrations that approximately range from 1x1018-1x1020 cm−3. After an RTA anneal at 1000°C for 5s, indium exhibits substantial motion at both the tail and peak regions for high doses. The enhanced diffusion is mostly over within 5s. There was not any observable enhanced diffusion in the tail region at the lowest dose although there was significant movement at the peak region. The dose loss correlates very well with the enhancement in the diffusivity. TEM images show that the amorphization dose lies between 3x1013 and 8x1013 cm−2. In spite of the amorphization, diffusion enhancement in the tail region still keeps increasing with dose, which is contrary to a model of “+1” interstitials and complete removal of interstitials in the regrown layer. The 550°C lh anneals show that the dose loss can partially be attributed to the sweeping of the dopant by the growing a/c interface. Previously, the solubility of indium has been estimated to be around 1–2×1018 cm−3. At high doses, significant movement is observed at the peak of the indium profile although the peak concentration exceeds the solubility level by at least an order of magnitude. This shows that indium is not precipitating into an immobile phase like antimony or boron.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 205
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shahidi, G.G.. Davari, B., Bucelot, T.J., Ronsheim, P.A., Coane, P.J., Pollack, S., Blair, C.R., Clark, B., and Hansen, H.H., IEEE Electron Device Lett. 14, 409 (1993).Google Scholar
2. Lee, Y.-T., Song, K.-W., Park, B.-G., and Lee, J.D., Jpn. J. Appl. Phys. 36, 1341 (1997).Google Scholar
3. Benistant, F., Tedesco, S., Guegan, G., Martin, F., Heitzman, M., and Dal'zotto, B., Microel. Engineering 30, 459 (1996).Google Scholar
4. Antoniadis, D.A., and Moskowitz, I., J. Appl. Phys. 53, 9214 (1982).Google Scholar
5. Kizilyalli, I.C., Rich, T.L., Stevie, F.A., and Rafferty, C.S., J. Appl. Phys. 80, 4944 (1996).Google Scholar
6. Kizilyalli, I.C., Stevie, F.A., and Bude, J.D., IEEE Electron Device Lett. 17, 46 (1996).Google Scholar
7. Kizilyalli, I.C., Chen, A.S., Nagy, W.J., Rich, T.L., Ham, T.E., Lee, K.H., Carroll, M.S., and lanuzzi, M., IEEE Electron Device Lett. 18, 120 (1997).Google Scholar
8. Suzuki, K., Tashiro, H., and Aoyama, T., Solid-State Electronics 43, 27 (1999).Google Scholar
9. Griffin, P.B., Cao, M., Voorde, P.V., Chang, Y.-L., and Greene, W.M., Appl. Phys. Lett. 73, 2986 (1998).Google Scholar
10. Benedict, J., Anderson, R., and Klepeis, S.J., Mat. Res. Soc. Symp. Proc. 254, 121 (1992).Google Scholar
11. Lilak, A., Earles, S.K., Jones, K.S., Law, M.E., and Giles, M.D., IEDM Tech. Dig., 493 (1997).Google Scholar
12. Jones, K.S., Prussin, S., and Weber, E.R., Appl. Phys. A 45, 1 (1988).Google Scholar
13. Griffin, P.B., Crowder, S.W., and Knight, J.M., Appl. Phys. Lett. 67, 482 (1995).Google Scholar
14. Jacobs, J.B., Schiebel, R., K. Joyner, and Houston, T.W., Proc. IEEE International SOI Conf., 68 (1997).Google Scholar
15. Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
16. Bouillon, P., Gwoziecki, R., and Skotnicki, T., IEDM Tech. Dig., 231 (1997).Google Scholar
17. Bouillon, P. et al., IEDM Tech Dig., 897 (1995).Google Scholar
18. Sato, A., Suzuki, K., Horie, H., and Sugii, T., Proc. IEEE 1995 Int. Conference on Microelectronic Test Structures 8, 259 (1995).Google Scholar
19. Solmi, S., and Nobili, D., J. Appl. Phys. 83, 2484 (1998).Google Scholar
20. Solmi, S., Landi, E., and Baruffaldi, F., J. Appl. Phys. 68, 3250 (1990).Google Scholar