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Topographical and chemical surface modification of porous MSQ using silylating agents with different numbers of methoxy groups

Published online by Cambridge University Press:  01 February 2011

Casey Smith ,
Dennis Mueller ,
Phil Matz  and
Rick Reidy
Casey Smith
Affiliation:
[email protected], University of North Texas, Materials Science, 3940 N Elm St. STE E132, Denton, TX, 76207, United States
Dennis Mueller
Affiliation:
[email protected], University of North Texas, Physics, Denton, 76207, United States
Phil Matz
Affiliation:
[email protected], Texas Instruments, Silicon Technology Development, Dallas, 75234, United States
Rick Reidy
Affiliation:
[email protected], University of North Texas, Materials Science, 3940 N. Elm St., Denton, TX, 76207, United States
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Abstract

Plasma ash processes that cause surface damage in porous interlayer dielectric materials (ILDs) result in increased water absorption, permittivity, and metal intrusion. In this study, we employ mono-, di-, and tri-functional alkoxide silylation agents in supercritical CO2 to repair O2 ash damaged low-k methylsilsesquioxane (MSQ) films. Fourier transform infrared spectroscopy (FTIR) was performed using normal incidence transmission and attenuated total reflection (ATR) techniques to highlight differences in silylation efficiency based on agent functionality. Contact angle measurements reveal a significant change in hydrophobicity after functionalization of the O2 ashed samples with multifunctional agents. Atomic force microscopy (AFM) was utilized to determine changes in surface topography after ashing and repair.

Keywords

surface chemistrydielectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-04
Copyright
Copyright © Materials Research Society 2006

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