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Top-Gate Graphene-on-UNCD Transistors with Enhanced Performance

Published online by Cambridge University Press:  30 August 2011

Jie Yu ,
Guanxiong Liu ,
Anirudha V. Sumant  and
Alexander A. Balandin
Jie Yu
Affiliation:
Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, University of California, Riverside, California 92521 USA
Guanxiong Liu
Affiliation:
Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, University of California, Riverside, California 92521 USA
Anirudha V. Sumant
Affiliation:
Center for Nanoscale Materials, Argonne National Laboratory, IL, 60439 USA
Alexander A. Balandin
Affiliation:
Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, University of California, Riverside, California 92521 USA
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Abstract

We fabricated a number of top-gate graphene field-effect transistors on the ultrananocrystalline diamond (UNCD) – Si composite substrates. Raman spectroscopy, scanning electron microscopy and atomic force microscopy were used to verify the quality of UNCD and graphene device channels. The thermal measurements were carried out with the “hot disk” and “laser flash” methods. It was found that graphene on UNCD devices have increased breakdown current density by ∼50% compared to the reference devices fabricated on Si/SiO2. The relatively smooth surface of UNCD, as compared to other synthetic diamond films, allowed us to fabricate top gate graphene devices with the drift mobility of up to ∼ 2587 cm2V-1s-1.

Keywords

Cdiamonddevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1344: Symposium Y – Functional Two-Dimensional Layered Materials—From Graphene to Topological Insulators , 2011 , mrss11-1344-y03-09
Copyright
Copyright © Materials Research Society 2011

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References

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