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ToF-SIMS Study of Pulsed Laser Melting Energy Density on Ti Implanted Si for Intermediate Band

Published online by Cambridge University Press:  31 January 2011

Javier Olea Ariza ,
David Pastor ,
Ignacio Mártil  and
Germán González-Díaz
Javier Olea Ariza
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III (Electricidad y Electrónica), Madrid, Spain
David Pastor
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III (Electricidad y Electrónica), Madrid, Spain
Ignacio Mártil
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III (Electricidad y Electrónica), Madrid, Spain
Germán González-Díaz
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III (Electricidad y Electrónica), Madrid, Spain
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Abstract

An exhaustive study on the resulting impurity profile in Si samples implanted with Ti with high doses and subsequently Pulsed-Laser Melting (PLM) annealed is presented. Two different effects are shown to be present in the two different stages of the annealing. In the melting stage the box-shaped effect tends to increase the thickness of the implanted layer and to decrease the maximum peak concentration as the energy density of the annealing increases. On the contrary, in the solidifying stage, the snow-plow effect decreases the thickness of the layer and increases the maximum peak concentration as the energy density of the annealing increases. Moreover, as a direct consequence of the snow-plow effect, part of the impurities is expelled from the sample by the surface.

Keywords

photovoltaiclaserannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q08-16
Copyright
Copyright © Materials Research Society 2010

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