Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T15:58:07.063Z Has data issue: false hasContentIssue false
  • English
  • Français

Title: Inkjet-printed rectifying metal-insulator-semiconductor (MIS) diodes for flexible electronic applications

Published online by Cambridge University Press:  24 April 2014

Kalyan Yoti Mitra ,
Carme Martínez-Domingo ,
Enrico Sowade ,
Eloi Ramon ,
Henrique Leonel Gomes  and
Reinhard. R. Baumann
Kalyan Yoti Mitra
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany
Carme Martínez-Domingo
Affiliation:
Universitat Autónoma de Barcelona, CAIAC, Bellaterra, Spain
Enrico Sowade
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany
Eloi Ramon
Affiliation:
Universitat Autónoma de Barcelona, CAIAC, Bellaterra, Spain
Henrique Leonel Gomes
Affiliation:
Universidade do Algarve, Institute of Telecommunications, Faro, Portugal
Reinhard. R. Baumann
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany Fraunhofer Institute for Electronic Nano Systems (ENAS), Department Printed Functionalities, Chemnitz, Germany
Get access

Abstract

Inkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

Keywords

ink-jet printinginsulatordevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1628: Symposium M – Large-Area Processing and Patterning for Active Optical and Electronic Devices , 2014 , mrsf13-1628-m06-08
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Martínez-Domingo, C., “Characterization of Inkjet-printed Organic Thin-Film Transistors ” Master Thesis, Universitat Autónoma de Barcelona, 2012.Google Scholar
Kasania, K., Mitra, K. Y., Hammerschmidt, J., Baumann, R. R. “Optimization of the morphology of insulating layers in fully inkjet-printed capacitors” Master thesis, Chemnitz University of Technology, 2013 Google Scholar
Cheng, P. L., Leung, Stanley Y. Y., Law, T. W., Liu, C. K., Chong, Jones I. T., and Lam, David C. C., “Quantitative Analysis of Resistance Tolerance of Polymer Thick Film Printed Resistors”, IEEE Transactions on Component and Packaging Technologies, VOL. 30, NO. 2, June 2007 CrossRefGoogle Scholar
Kim, HS., Dhage, S. R., Shim, DE., Hahn, H. T., “Intense pulsed light sintering of copper nanoink for printed electronics”, Applied Physics A, Vol. 97, pp 791–798, 2009 CrossRefGoogle Scholar
Ahmad, Z, Sayyad, M.H., “Electrical characteristics of a high rectification ratio organic Schottky diode based on methyl red”, Optoelectronics and Advanced Materials- Rapid Communication, vol. 3, No. 5, May 2009, pp 509 – 512 Google Scholar
Marjanovic, N., Hammerschmidt, J., Perelaer, J., Farnsworth, S., Rawson, I., Kus, M., Yenel, E., Tilki, S., Schubert, U. S. and Baumann, R. R., “Inkjet printing and low temperature sintering of CuO and CdS as functional electronic layers and Schottky diodes”, Journal of Materials Chemistry, Vol. no. 21,13634, June 2011 CrossRefGoogle Scholar
Lilja, K. E., Majumdar, H. S., Pettersson, F. S., Oesterbacka, R. and Joutsenoja, T., “Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer”, Journal of ACS Applied Material & Interfaces, Vol. 3, No. 1, 2011, pp 7–10 CrossRefGoogle ScholarPubMed
Lilja, K. E., Majumdar, H S, Lahtonen, K., Heljo, P., S Tuukkanen, T Joutsenoja, Valden, M, Oesterbacka, R and Lupo, D, “Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes”, Journal of Physics D: Applied Physics, Vol. 44, 295301, pp 6, 2011 CrossRefGoogle Scholar
Jung, M., Kim, J., Noh, J., Lim, N., Lim, C., Lee, G., Kim, J., Kang, H., Jung, K., Leonard, A. D., Tour, J. M., Cho, G., “All-Printed and Roll-to-Roll-Printable 13.56-MHz-Operated 1-bit RF Tag on Plastic Foils”, IEEE Journal Transactions on electron devices, Vol. 57, No. 3, 2010 Google Scholar
Steudel, S., De Vusser, S., Myny, K., Lenes, M., Genoe, J., Heremans, P., “Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags”, Journal of Applied Physics, Vol. 99, 114519, 2006 CrossRefGoogle Scholar
Sze, S. M.; Ng, K. K. “Physics of Semiconductor Devices”, 3 rd edition, John Wiley & Sons: New York, 2007; pp 417–437.Google Scholar
Hudait, M. K.; Krupanidhi, S. B. “Solid-State Electron”, 2000, No. 44, pp 1089–1097. CrossRefGoogle Scholar