Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T16:35:11.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Titanium Nitride Epitaxy on Tungsten (100) by Sublimation Crystal Growth

Published online by Cambridge University Press:  01 February 2011

Lisa Mercurio ,
James H. Edgar ,
Li Du  and
E. A. Kenik
Lisa Mercurio
Affiliation:
Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
James H. Edgar
Affiliation:
[email protected], Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
Li Du
Affiliation:
[email protected], Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
E. A. Kenik
Affiliation:
[email protected], Oak Ridge National Laboratory, 1 Bethel Valley Rd, Oak Ridge, TN, 37831-6064, United States
Get access

Abstract

Titanium nitride crystals were grown from titanium nitride powder on tungsten by the sublimation-recondensation technique. The bright golden TiN crystals displayed a variety of shapes including cubes, truncated tetrahedrons, truncated octahedrons, and tetrahedrons bounded by (111) and (100) crystal planes. The TiN crystals formed regular, repeated patterns within individual W grains that suggested epitaxy. X-ray diffraction and electron backscattering diffraction revealed that the tungsten foil was highly textured with a preferred foil normal of (100) and confirmed that the TiN particles deposited epitaxially with the orientation TiN(100)‖W(100) and TiN[100]‖W[110], that is, the unit cells of the TiN crystals were rotated 45° with respect to the tungsten. Because of its larger coefficient of thermal expansion compared to W, upon cooling from the growth temperature, the TiN crystals were under in-plane tensile strain, causing many of the TiN crystals to crack.

Keywords

crystal growthepitaxynitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-11
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Edgar, J.H., Liu, L., Liu, B., Zhuang, D., Chaudhuri, J., Kuball, M., and Rajasingam, S., J. Cryst. Growth 246, 187 (2002).Google Scholar
2. Semmelroth, K., Schulze, N., and Pensl, G., J. Phys.: Condens. Matter 16, S1597 (2004).Google Scholar
3. Gu, Zheng, Edgar, J.H., Pomeroy, J., Kuball, M., and Coffey, D.W., J. Mater. Sci.: Mater. Elec. 15, 555 (2004).Google Scholar
4. Gu, Z., Edgar, J.H., Coffey, D.W., Chaudhuri, J., Nyakiti, L., Lee, R.G., and Wen, J.G., J. Cryst. Growth 293, 242 (2006).Google Scholar
5. LeClair, Patrick R., Titanium Nitride Thin Films by the Electron Shower Process, Bachelorís thesis, Massachusetts Institute of Technology, 1998.Google Scholar
6. Patsalas, P. and Logothetidis, S., J. Appl. Phys. 90, 4725 (2001).Google Scholar
7. Toth, L.E., Transition Metal Carbides and Nitrides, (Academic Press, New York, 1971) p. 7.Google Scholar
8. Hultman, L., Vacuum 57, 1 (2000).Google Scholar
9. Piscanec, S., Ciacchi, L.C., Vesselli, E., Comelli, G., Sbaizero, O., Meriani, S., and De Vita, A., Acta Materilia 52, 1237 (2004).Google Scholar
10. Motojima, S., Baba, K., Kitatani, K., Takahashi, Y., and Sugiyama, K., J. Cryst. Growth 32, 141 (1976).Google Scholar
11. Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhury, R., and Zheleva, T., Appl. Phys. Lett. 61, 1290 (1992).Google Scholar
12. Zheleva, T., Jagannadham, K., and Narayan, J., J. Appl. Phys. 75, 860 (1994).Google Scholar
13. Chase, M.W. Jr, Journal of Physical and Chemical Reference Data, NIST-JANAF Thermochemical Tables, 4th ed. (American Chemical Society and American Institute of Physics, Washington D.C., 1998) p. 59–62, 129–130, 1612–1614, 1907–1912.Google Scholar
14. Wang, Kai and Reeber, Robert R., Mater. Sci. Eng. Rep. R23, 101 (1998).Google Scholar
15. Liu, L., Liu, B., Edgar, J.H., Rajasingam, S., and Kuball, M., J. Appl. Phys. 92, 5183 (2002).Google Scholar
16. Freund, L.B. and Suresh, S., Thin Film Materials, (Cambridge Univ. Press, Cambridge, 2003).Google Scholar