Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T20:48:33.194Z Has data issue: false hasContentIssue false
  • English
  • Français

TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder

Published online by Cambridge University Press:  05 February 2014

Gabriele Penazzi ,
Peter Deák ,
Bálint Aradi ,
Tim Wehling ,
Alessio Gagliardi ,
Huynh Anh Huy ,
Binghai Yan  and
Thomas Frauenheim
Gabriele Penazzi
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany.
Peter Deák
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany.
Bálint Aradi
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany.
Tim Wehling
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany. Institute for Theoretical Physics, University of Bremen, Bremen, Germany.
Alessio Gagliardi
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Roma, Italy.
Huynh Anh Huy
Affiliation:
Department of Physics, School of Education, University of Can Tho, Can Tho, Viet Nam.
Binghai Yan
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany.
Thomas Frauenheim
Affiliation:
Bremen Center for Computational Material Science, University of Bremen, Bremen, Germany.
Get access

Abstract

Dirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states respect to an Anderson disorder model and substitutional impurity and compare to different one dimensional systems. The results suggest that thin anatase TiO2 nanowires can be a promising candidate material for switching devices.

Keywords

nanostructureoxideelectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1659: Symposium SS/XX – Micro- and Nanoscale Systems – Novel Materials, Structures and Devices , 2014 , pp. 187 - 191
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Mayrhofer, L. and Bercioux, D., “Pseudospin-dependent scattering in carbon nanotubes,” Physical Review B, vol. 84, no. 11, Sep. 2011.CrossRefGoogle Scholar
Katsnelson, M. I., Novoselov, K. S., and Geim, A. K., “Chiral tunnelling and the Klein paradox in graphene,” Nature Physics, vol. 2, no. 9, pp. 620–625, Aug. 2006.CrossRefGoogle Scholar
Du, X., Skachko, I., Barker, A., and Andrei, E. Y., “Approaching ballistic transport in suspended graphene,” Nature Nanotechnology, vol. 3, no. 8, pp. 491–495, Jul. 2008.CrossRefGoogle ScholarPubMed
Anantram, M. P. and Léonard, F., “Physics of carbon nanotube electronic devices,” Reports on Progress in Physics, vol. 69, no. 3, pp. 507–561, Mar. 2006.CrossRefGoogle Scholar
Schwierz, F. Graphene transistors. Nat. Nanotechnol. 2010, 5,487.Google Scholar
Deák, P.; Aradi, B.; Gagliardi, A.; Huy, H. A.; Penazzi, G.; Yan, B.; Wehling, T. & Frauenheim, T. Nano Letters, 2013, 13, 1073.CrossRefGoogle Scholar
Porezag, D., Frauenheim, T., Köhler, T., Seifert, G., and Kaschner, R., “Construction of tight-binding-like potentials on the basis of density-functional theory: Application to carbon,” Physical Review B, vol. 51, p. 12947, 1995.CrossRefGoogle Scholar
There is some confusion in literature regarding a factor of 2 in the definition localization length. Many authors apply the definition in Rep. Prog. Phys. 56 (1993) pag. 1499. According to that definition the localization length of 72 and 131 nm, mentioned in the text, become respectively 144 and 262 nm. Google Scholar
Triozon, F., Roche, S., Rubio, A., and Mayou, D., “Electrical transport in carbon nanotubes: Role of disorder and helical symmetries,” Physical Review B, vol. 69, no. 12, Mar. 2004.CrossRefGoogle Scholar
Pecchia, A., Penazzi, G., Salvucci, L., and Di Carlo, A., “Non-equilibrium Green’s functions in density functional tight-binding: method and applications,” New Journal of Physics, vol. 10, p. 065022, 2008.CrossRefGoogle Scholar
Aradi, B., Hourahine, B., and Freuneheim, T., “DFTB+, a sparse-matrix based implementation of the DFTB method,” Journal of Physical Chemistry A, vol. 111, no. 26, p. 5678, 2007.CrossRefGoogle ScholarPubMed
Markussen, T., Rurali, R., Brandbyge, M., and Jauho, A.-P., “Electronic transport through Si nanowires: Role of bulk and surface disorder,” Physical Review B, vol. 74, no. 24, Dec. 2006.CrossRefGoogle Scholar