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Time-Resolved Photoluminescence from nm-Sized Silicon Crystallites In SiO2

Published online by Cambridge University Press:  10 February 2011

J. Linnros ,
A. Galeckas ,
A. Pareaud ,
N. Lalic ,
V. Grivickas  and
L. Hultman
J. Linnros
Affiliation:
Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden, [email protected]
A. Galeckas
Affiliation:
Permanent address: Inst. of Mat. Res. and Appl. Sci., Vilnius University, 2054 Vilnius, Lithuania
A. Pareaud
Affiliation:
Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden, [email protected]
N. Lalic
Affiliation:
Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden, [email protected]
V. Grivickas
Affiliation:
Permanent address: Inst. of Mat. Res. and Appl. Sci., Vilnius University, 2054 Vilnius, Lithuania
L. Hultman
Affiliation:
Dept. of Physics, Linköping University, S-581 83 Link6ping, Sweden
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Abstract

Time resolved photoluminescence (PL) decays have been measured for Si nanocrystals embedded in silicon dioxide. The nanocrystals were formed by Si implantation followed by thermal annealing at 800 – 1200 °C. The observed PL peaked in the wavelength range 640 – 850 nm and the PL decay exhibited a stretched exponential lineshape, characterized by a relatively large time constant. A nonlinear dose dependence of the PL yield and an observed redshifting for increasing doses and/or higher annealing temperatures is discussed in terms of a nucleation and growth mechanism for the nanocrystals. Finally, we argue that Auger recombination is effective at high excitation densities explaining a wavelength dependent saturation of the PL intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 249
Copyright
Copyright © Materials Research Society 1998

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