Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-27T02:30:37.246Z Has data issue: false hasContentIssue false
  • English
  • Français

Time-Resolved Ellipsometry and Reflectivity Measurements of the Optical Properties of Silicon During Pulsed Excimer Laser Irradiation*

Published online by Cambridge University Press:  25 February 2011

G. E. Jellison Jr.  and
D. H. Lowndes
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831
Get access

Abstract

Several advances in time-resolved optical measurement techniques have been made, which allow a more detailed determination of the optical properties of silicon immediately before, during, and after pulsed laser irradiation. It is now possible to follow in detail the time-resolved reflectivity signal near the melting threshold; measurements indicate that melting occurs in a spatially inhomogeneous way. The use of time-resolved ellipsometry allowed us to accurately measure the optical properties of the high reflectivity (molten) phase, and of the hot, solid silicon before and after the laser pulse. We obtain n = 3.8, k = 5.2 (±10.1) at λ = 632.8 nm for the high reflectivity phase, in minor disagreement with the published values of Shvarev et al. for liquid silicon. Before and after the high reflectivity phase, the time-resolved ellipsometry measurements are entirely consistent with the known optical properties of crystalline silicon at temperatures up to its melting point.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 113
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E., and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
2. Lowndes, D. H., Jellison, G. E. Jr., and Wood, R. F., Phys. Rev. B 26, 6747 (1982).Google Scholar
3. Lowndes, D. H., Wood, R. F., and Westbrook, R. D., Appl. Phys. Lett. 43, 258 (1983).Google Scholar
4. Jellison, G. E. Jr., Craven, L. K., and Burke, H. H., private communication.Google Scholar
5. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1982).Google Scholar
6. Hawkins, W. G. and Biegelsen, D. K., Appl. Phys. Lett. 42, 358 (1983); Sipe, J. E., Young, J. F., Preston, J. S., and van Driel, H. M., Phys. Rev. B 27, 1141 (1983); Young, J. F., Preston, J. S., van Driel, H. M., and Sipe, J. E., Phys. Rev. B 27, 1155 (1983); Young, J. F., Sipe, J. E., and van Driel, H. M., Phys. Rev. B 30, 2001 (1984).Google Scholar
7. Combescot, M., Bok, J., and I la Guillame, C. Benoit, Phys. Rev. B 29, (1984).Google Scholar
8. Azzam, R. M. A. and Bashara, N. M. “Ellipsometry and Polarized Light” (North Holland, New York, 1977).Google Scholar
9. Shvarev, K. M., Baum, B. A., and Gel'd, P. V., High Temp. 15, 548 (1977).Google Scholar
10. Jellison, G. E. Jr. and Modine, F. A., Appl. Phys. Lett 41, 1980 (1982).Google Scholar