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Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

Published online by Cambridge University Press:  28 February 2011

O. Bostanjoglo ,
F. E. Endruschat  and
W. Tornow
O. Bostanjoglo
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
F. E. Endruschat
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
W. Tornow
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
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Abstract

This paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 345
Copyright
Copyright © Materials Research Society 1986

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