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Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

Published online by Cambridge University Press:  26 February 2011

B. K. Meyer ,
D. Volm ,
C. Wetzel ,
L. Eckey ,
J.-Ch. Holst ,
P. Maxim ,
R. Heitz ,
A. Hoffmann ,
I. Broser  and
E. N. Mokhov
...Show all authors
B. K. Meyer
Affiliation:
Technische Universität München, Physik-Department E16, 85747 Garching, Germany
D. Volm
Affiliation:
Technische Universität München, Physik-Department E16, 85747 Garching, Germany
C. Wetzel
Affiliation:
Lawrence Berleley Lab., Berkeley, CA, USA
L. Eckey
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
J.-Ch. Holst
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
P. Maxim
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
R. Heitz
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
I. Broser
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
E. N. Mokhov
Affiliation:
Ioffe Physico Technical Institut, 194021 St. Petersburg, Russia
P. G. Baranov
Affiliation:
Ioffe Physico Technical Institut, 194021 St. Petersburg, Russia
C. Qiu
Affiliation:
Astralux, Boulder, CO, USA
J. I. Pankove
Affiliation:
Astralux, Boulder, CO, USA
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Abstract

Free and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 521
Copyright
Copyright © Materials Research Society 1995

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