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Threshold Energy Density for Pulsed Laser Annealing of Silicon

Published online by Cambridge University Press:  15 February 2011

Dick Hoonhout  and
Frans Saris
Dick Hoonhout
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Frans Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

We have made a systematic investigation of the threshold energy density for recrystallization of ion-implanted silicon by Q-switched laser irradiation as function of thickness of the disordered layer, temperature during implantation, type and dose of implanted impurity, laser wavelength, and substrate orientation. Most results have been obtained with a Q-switched ruby laser. A linear dependence of the threshold on layer thickness (in the region of 60–300 nm) was found for arsneic-implanted silicon, but not for silicon-implanted silicon. For an amorphous layer thickness of 200 nm we found very little dependence of the threshold on type of dopant. In the case of the Nd:YAG laser, however, the lowest threshold was observed for column VI elements, the highest for column IV elements and intermediate and equal thresholds for the elements from column III and B. The influence of temperature during implantation was found to be small, but the threshold appeared to be different for (100)- and (111)- oriented substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 31
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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