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Three-Dimensional Nanoarchitectured Transparent Conducting Oxides: Synthesis, Characterization and Photovoltaic Applications

Published online by Cambridge University Press:  13 May 2013

Zhenzhen Yang  and
Tao Xu
Zhenzhen Yang
Affiliation:
Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, IL 60115, USA
Tao Xu*
Affiliation:
Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, IL 60115, USA
*
*Email: [email protected]
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Abstract

The photovoltaic materials in solar cells take multiple tasks including absorbing lights, separating the light-induced electron-hole pairs, and consequently transport charges to the corresponding metallic electrodes. These tasks, however, are often mutually conflicting. In particular, a thick PV layer is desired to absorb enough light for creating sufficient light-induced charges, while a thin PV layer is also desired to shorten the charge transport path length insider the PV layer in order to suppress recombination. Using dye-sensitized solar cells as an exploratory platform, this dilemma is mitigated using a non-traditional 3-dimensional (3-D) highly doped fluorinated SnO2 (FTO, core)-TiO2(shell) nanostructured photoanodes. The FTO core serves as conductive core for low-resistance and drift-assisted electron extraction. The thin, conformal and low-doped TiO2 shell layer is coated by atomic layer deposition, which provides a large area for anchoring dyes and maintains a large resistance against recombination.

Keywords

atomic layer depositionoxidephotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1552: Symposium S – Nanostructured Metal Oxides for Advanced Applications , 2013 , pp. 23 - 28
Copyright
Copyright © Materials Research Society 2013 

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References

Grätzel, M. Inorg. Chem. 2005, 44, 6841.CrossRefGoogle Scholar
Junghänel, M.; Tributsch, H. J. Phys. Chem. B 2005, 109, 22876.CrossRefGoogle Scholar
Kopidakis, N.; Park, E. A. S.-G.; van de Lagemaat, J.; Frank, A. J. J. Phys. Chem. B 2000, 104, 3930.CrossRefGoogle Scholar
Gregg, B. A.; Hanna, M. C. J. Appl. Phys. 2003, 93, 3605.CrossRefGoogle Scholar
Fu, D.; Zou, J.; Wang, K.; Zhang, R.; Yu, D.; Wu, J. Nano Lett. 2011, 11, 3809.CrossRefGoogle Scholar
Hagfeldt, A.; Boschloo, G.; Sun, L.; Kloo, L.; Pettersson, H. Chem. Rev. 2010, 110, 6595.CrossRefGoogle Scholar
Martinson, A. B. F.; Goes, M. S.; Fabregat-Santiago, F.; Bisquert, J.; Pellin, M. J.; Hupp, J. T. J. Phys. Chem. A 2009, 113, 4015.CrossRefGoogle Scholar
Cameron, P. J.; Peter, L. M. J. Phys. Chem. B 2005, 109, 7392.CrossRefGoogle Scholar
Peter, L. Acc. Chem. Res. 2009, 42, 1839.CrossRefGoogle Scholar
Wang, Q.; Ito, S.; Grätzel, M.; Fabregat-Santiago, F.; Mora-Seró, I.; Bisquert, J.; Bessho, T.; Imai, H. J. Phys. Chem. B 2006, 110, 25210.CrossRefGoogle Scholar
Hamann, T. W.; Jensen, R. A.; Martinson, A. B. F.; van Ryswyk, H.; Hupp, J. T. Energy Environ. Sci. 2008, 1, 66.CrossRefGoogle Scholar
Spokoyny, A. M.; Li, T. C.; Farha, O. K.; Machan, C. W.; She, C.; Stern, C. L.; Marks, T. J.; Hupp, J. T.; Mirkin, C. A. Angew. Chem. Int. Ed. 2010, 49, 5339.CrossRefGoogle Scholar
Peter, L. M. Phys. Chem. Chem. Phys 2007, 9, 2630.CrossRefGoogle Scholar
Wu, H. H., ; Carney, L., ; Ruan, T., ; Kong, Z., ; Yu, D., ; Yao, Z., ; Cha, Y., ; Zhu, J. J., ; Fan, J., ; Cui, Y, S.. J. Am. Chem. Soc. 2011, 133, 27.CrossRefGoogle Scholar
Calnan, S. T., A. N. Thin Solid Films 2010, 518, 1839.CrossRefGoogle Scholar
Wang, Y.; Brezesinski, T.; Antonietti, M.; Smarsly, B. ACS Nano 2009, 3, 1373.CrossRefGoogle Scholar
Yang, Z.; Gao, S.; Li, T.; Liu, F.; Ren, Y.; Xu, T. ACS Appl. Mater. & Interfaces 2012, 4, 4419.CrossRefGoogle Scholar
Ramasamy, E.; Lee, J. J. Phys. Chem. C 2010, 114, 22032.CrossRefGoogle Scholar
Tiwana, P.; Docampo, P.; Johnston, M. B.; Snaith, H. J.; Herz, L. M. ACS Nano 2011, 5, 5158.CrossRefGoogle Scholar
Chappel, S.; Chen, S.-G.; Zaban, A. Langmuir 2002, 18, 3336.CrossRefGoogle Scholar
Prasittichai, C.; Hupp, J. T. J. Phys. Chem. Lett. 2010, 1, 1611.CrossRefGoogle Scholar
Dou, X.; Sabba, D.; Mathews, N.; Wong, L. H.; Lam, Y. M.; Mhaisalkar, S. Chem. Mater. 2011, 23, 3938.CrossRefGoogle Scholar
Gubbala, S.; Chakrapani, V.; Kumar, V.; Sunkara, M. K. Adv. Funct. Mater. 2008, 18, 2411.CrossRefGoogle Scholar
Peter, L. M. J. Phys. Chem. C 2007, 111, 6601.CrossRefGoogle Scholar
Klein, A.; Körber, C.; Wachau, A.; Säuberlich, F.; Gassenbauer, Y.; Harvey, S. P.; Proffit, D. E.; Mason, T. O. Materials 2010, 3, 4892.CrossRefGoogle Scholar
Xu, J.; Huang, S.; Wang, Z. Solid State Comm. 2009, 149, 527.CrossRefGoogle Scholar
Wu, H.; Hu, L.; Carney, T.; Ruan, Z.; Kong, D.; Yu, Z.; Yao, Y.; Cha, J. J.; Zhu, J.; Fan, S.; Cui, Y. J. Am. Chem. Soc. 2011, 133, 27.CrossRefGoogle Scholar
Turrión, M.; Macht, B.; Tributsch, H.; Salvador, P. J. Phys. Chem. B 2001, 105, 9732.CrossRefGoogle Scholar
Munnix, S.; Schmeits, M. Phys. Rev. B 1986, 33, 4136.CrossRefGoogle Scholar
González-Pedro, V.; Xu, X.; Mora-Seró, I. nBisquert, J. ACS Nano 2010, 4, 5783.CrossRefGoogle Scholar
Fabregat-Santiago, F.; Garcia-Belmonte, G.; Mora-Seró, I.; Bisquert, J. Phys. Chem. Chem. Phys. 2011, 13, 35.CrossRefGoogle Scholar
Wang, Q.; Ito, S.; Gratzel, M.; Fabregat-Santiago, F.; Mora-Sero, I.; Bisquert, J.; Bessho, T.; Imai, H. J. Phys. Chem. B 2006, 110, 25210.CrossRefGoogle Scholar