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Three Synthesis Routes of Single-crystalline PbS Nanowires and Their Electrical Transport Properties

Published online by Cambridge University Press:  01 February 2011

So Young Jang ,
Yun Mi Song ,
Han Sung Kim ,
Yong Jae Cho ,
Young Suk Seo ,
Gyeong Bok Jung ,
Chi-Woo Lee  and
Jeunghee Park
So Young Jang
Affiliation:
[email protected], Korea University, Chemistry, seoul, Korea, Republic of
Yun Mi Song
Affiliation:
[email protected], Korea University, Chemistry, seoul, Korea, Republic of
Han Sung Kim
Affiliation:
[email protected], Korea University, chemistry, seoul, Korea, Republic of
Yong Jae Cho
Affiliation:
[email protected], Korea university, Chemistry, Seoul, Korea, Republic of
Young Suk Seo
Affiliation:
[email protected], Korea university, Chemistry, Seoul, Korea, Republic of
Gyeong Bok Jung
Affiliation:
[email protected], Korea University, Chemistry, Seoul, Korea, Republic of
Chi-Woo Lee
Affiliation:
[email protected], Korea University, Chemistry, Seoul, Korea, Republic of
Jeunghee Park
Affiliation:
[email protected], Korea University, Chemistry, Seoul, Korea, Republic of
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Abstract

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pre-grown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from [100] to [110]. We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm2V−1s−1.

Keywords

chemical compositionelectrical propertiesnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-P04-39
Copyright
Copyright © Materials Research Society 2010

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References

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