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Thin-Film Transistors in CO2-Laser Crystallized Silicon Films On Fused Silica

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson ,
H. C. Tuan ,
M. D. Moyer ,
M. J. Thompson ,
D. K. Biegelsen ,
L. E. Fennell  and
A. Chiang
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
H. C. Tuan
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
M. J. Thompson
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
L. E. Fennell
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
A. Chiang
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
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Abstract

Thin-film transistors (TFT) have been fabricated in scanned CO2 laser-crystallized silicon films on bulk fused silica. In n-channel enhancement-mode transistors, it is demonstrated that an excessively large leakage current can be electric-field modulated with a gate electrode located beneath the silicon layer. This dual-gate configuration provides direct verification on bulk glass substrates of back-channel leakage as has recently been demonstrated for beam-crystallized silicon films on thermal oxides over silicon wafers. With the application of deep-channel ion implantation to suppress back-channel leakage, high-peformance TFTs have been fabricated in single-crystal silicon films on fused silica. The results demonstrate that scanned CO 2 laser processing of silicon films on bulk glass can provide the basis for a silicon-on-insulator technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 605
Copyright
Copyright © Materials Research Society 1983

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References

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