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Thin Film Transistors of Microcrystalline Silicon Deposited by Plasma Enhanced-CVD

Published online by Cambridge University Press:  15 February 2011

Y. Chen  and
S. Wagner
Y. Chen
Affiliation:
Department of Electrical Engineering and Center for Photonics and Optoelectronic MaterialsPrinceton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering and Center for Photonics and Optoelectronic MaterialsPrinceton University, Princeton, NJ 08544
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Abstract

We fabricated top gate TFTs of microcrystalline silicon (μc-Si) deposited at 360 °C. The TFTs have field-effect electron mobilities of up to 7.9 cm2/Vs in the saturation regime and 5.8 cm2/Vs in the linear regime. The highest ION/IOFF ratio is 105. Typical values for Vth is 6.5 V and for the subthreshold slope is 1.7 V/decade. The μc-Si is grown by PE-CVD from a source gas mixture of SiH4, SiF4 and H2, with a typical flow ratio of 1:20:200, at a pressure of 120 Pa and a power density of 160 mW/cm2. The TFT structure is built on un-passivated Coming 7059 glass, with 300 n+ μc-Si, 60 nm n+ μc-Si source and drain contact layers, 200 nm SiO2 or 300 nm SiNx gate insulator, and 100 nm Al gate, source and drain electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 665
Copyright
Copyright © Materials Research Society 1999

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