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Thin Film Transistors based on Microcrystalline Silicon on Polyimiide Substrates

Published online by Cambridge University Press:  15 February 2011

A.P. Constant ,
T. Witt ,
K.A. Bratland ,
H.R. Shanks  and
A.R. Landin
A.P. Constant
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
T. Witt
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
K.A. Bratland
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
H.R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
A.R. Landin
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
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Abstract

This study reports on the fabrication of inverted gate TFT devices and circuits using a low temperature microcrystalline silicon deposition process compatible with polyimide substrates. Results from the electrical and material characterization of μ-Si:H based TFT's are presented. Device performance is compared with that of α-Si:H based TFT's constructed on polyimide. Results indicate that the anticipated improvement in device performance due to an increase in the α-Si:H Hall mobility (~10 cm2/V-sec) over that of α-Si:H (~1 cm2/V-sec) is not realized. Properties of μ-Si:H films are related to deposition parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 683
Copyright
Copyright © Materials Research Society 1999

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References

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