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Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

Published online by Cambridge University Press:  15 April 2015

M. Baseer Haider ,
Mohammad F. Al-Kuhaili ,
S. M. A. Durrani ,
Venkatesh Singaravelu  and
Iman Roqan
M. Baseer Haider
Affiliation:
Physics department, King Fahd University of Petroelum & Mineral, Dhahran, 31261, Saudi Arabia
Mohammad F. Al-Kuhaili
Affiliation:
Physics department, King Fahd University of Petroelum & Mineral, Dhahran, 31261, Saudi Arabia
S. M. A. Durrani
Affiliation:
Physics department, King Fahd University of Petroelum & Mineral, Dhahran, 31261, Saudi Arabia
Venkatesh Singaravelu
Affiliation:
King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division, Thuwal 23955-6900, Saudi Arabia.
Iman Roqan
Affiliation:
King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division, Thuwal 23955-6900, Saudi Arabia.
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Abstract

Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.

Keywords

semiconductingsputteringspintronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1731: Symposium O – Oxide Semiconductors , 2015 , mrsf14-1731-o09-11
Copyright
Copyright © Materials Research Society 2015 

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References

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